Hostname: page-component-cd9895bd7-lnqnp Total loading time: 0 Render date: 2024-12-27T02:34:59.762Z Has data issue: false hasContentIssue false
  • English
  • Français

Tem, Raman, and Langmuir Probe Studies of the Heteroepitaxial Growth of Metastable Cd(x)pb (1–X) Te Alloys Deposited on BaF2 by Low-Energy Bias Sputtering

Published online by Cambridge University Press:  26 February 2011

Suhit R. Das ,
John G. Cook  and
David J. Lockwood
Suhit R. Das
Affiliation:
Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Ontario K1A 0R6, Canada
John G. Cook
Affiliation:
Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Ontario K1A 0R6, Canada
David J. Lockwood
Affiliation:
Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Ontario K1A 0R6, Canada
Get access

Abstract

Metastable Cd(x)Pb(1–x)Te films with x values from 0 to 0.47, well past the range of bulk thermodynamic solubility, have been grown on single crystal (lll) BaF2 by co-deposition from CdTe and PbTe r.f. magnetron sputter targets. Cross-sectional transmission electron microscopy and transmission electron diffraction revealed epitaxial growth across the interface. However, the lattice of the deposited epilayers was observed to be typically rotated 180°C about the surface normal <111> axis of the substrate. Raman spectra of the alloys showed no evidence of segregation. Langmuir probe diagnostics were employed to estimate the energy of the ions incident on the substrate during growth which promote extended miscibility in the alloy epilayers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 201: Symposium A – Surface Chemistry and Beam-Solid Interactions , 1990 , 63
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Cook, J.G., Das, S.R., Lockwood, D.J., McCaffrey, J.P., and Timbrell, P.Y., Appl. Phys. Lett. 56, 2430 (1990).Google Scholar
2. Rosenberg, A.J., Grierson, R., Woolley, J.C., and Nikolic, P., Trans. Metall. Soc. AIME 230, 342 (1964).Google Scholar
3. Kulvitit, Y., Ph.D. Thesis, Universite de Rennes, Rennes, France (1981).Google Scholar
4. Rustom-Dalouche, R., Rolland, S., Granger, R., and Pelletier, C.M., Phys. Status Solidi B 129, 835 (1985).Google Scholar
5. McCaffrey, J.P., Das, S.R., and Cook, J.G., Mat. Res. Soc. Symp. Proc. 199, 131 (1990).Google Scholar
6. Lockwood, D.J., Dharma-wardana, M.W.C., Baribeau, J.-M., and Houghton, D.C., Phys. Rev. B 35, 2243 (1987).Google Scholar
7. Cook, J.G., Das, S.R., and Quance, T.A., J. Appl. Phys. 68, 1635 (1990).Google Scholar
8. Cook, J.G. and Das, S.R., Thin Solid Films (communicated).Google Scholar
9. Das, S.R., Phipps, M., Boland, W.E., and Cook, J.G., Thin Solid Films 181, 227 (1989).Google Scholar
10. Baleva, M., Christova, M., Iordanov, A., Metev, S., and Peneva, S., J. Mat. Sci. Lett. 4, 353 (1985).Google Scholar
11. Holloway, H., in Physics of Thin Films, edited by Hass, G. and Francombe, M. (Academic, New York, 1980), Vol. 11, p. 106.Google Scholar
12. Philips, J.M., in Silicon Molecular Beam Epitaxy, edited by Kasper, E. and Bean, J.C. (CRC Press, Inc., Florida, 1986) p. 136.Google Scholar
13. Tung, R.T., Bean, J.C., Gibson, J.M., Poate, J.M., and Jacobson, D.C., Appl. Phys. Lett. 40, 8 (1982).Google Scholar
14. Mitsuishi, A., J. Phys. Soc. Jpn. 16, 533 (1961).Google Scholar
15. Richter, W., Renucci, J.B., and Cardona, M., Phys. Status Solidi B 56, 223 (1973).Google Scholar