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Tem Investigation of Titanium Silicide Thin Films

Published online by Cambridge University Press:  10 February 2011

A. F. Myers ,
E. B. Steel ,
L. M. Struck ,
H. I. Liu  and
J. A. Burns
A. F. Myers
Affiliation:
Surface and Microanalysis Science Division, NIST, Gaithersburg, MD 20899.
E. B. Steel
Affiliation:
Surface and Microanalysis Science Division, NIST, Gaithersburg, MD 20899.
L. M. Struck
Affiliation:
Surface and Microanalysis Science Division, NIST, Gaithersburg, MD 20899.
H. I. Liu
Affiliation:
MIT Lincoln Laboratory, L-216, 224 Wood St., Lexington, MA 02173.
J. A. Burns
Affiliation:
MIT Lincoln Laboratory, L-216, 224 Wood St., Lexington, MA 02173.
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Abstract

Titanium silicide films grown on silicon were analyzed by transmission electron microscopy (TEM), electron diffraction, scanning transmission electron microscopy (STEM), and energy dispersive x-ray spectroscopy. The films were prepared by sequential rapid thermal annealing (RTA) at 675 °C and 850 °C of 16-nm-thick sputtered Ti on Si (001) wafers. In some cases, a 20-nm-thick TiN capping layer was deposited on the Ti film before the RTA procedure and was removed after annealing. TEM and STEM analyses showed that the silicide films were less than 0.1 μm thick; the capped film was more uniform, ranging in thickness from ∼ 25 – 45 nm, while the uncapped film ranged in thickness from ∼ 15 – 75 nm. Electron diffraction was used to determine that the capped film contained C54-TiSi2, C49-TiSi2, Ti5Si3, and possibly TiSi, and that the uncapped film contained C49-TiSi2, TiSi, Ti5Si3, unreacted Ti, and possibly C54-TiSi2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 523: Symposium U – Electron Microscopy of Semiconducting Materials & ULSI Devices , 1998 , 97
Copyright
Copyright © Materials Research Society 1998

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