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Tem Investigation of the Microstructure in Laser-Crystallized Ge Films

Published online by Cambridge University Press:  15 February 2011

Ronald P. Gale ,
John C. C. Fan ,
Ralph L. Chapman  and
Herbert J. Zeiger
Ronald P. Gale
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology Lexington, Massachusetts, 2173
John C. C. Fan
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology Lexington, Massachusetts, 2173
Ralph L. Chapman
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology Lexington, Massachusetts, 2173
Herbert J. Zeiger
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology Lexington, Massachusetts, 2173
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Abstract

The crystallite morphology and defect structure of laser-crystallized Ge films have been characterized by transmission (TEM) and scanning (SEM) electron microscopy. The elongated crystallites present in these films have their long axis in the [001] direction. In regions where these crystallites are well aligned with each other, competitive lateral growth and (110) texture are observed. The defects most frequently found are [111] microtwins. A growth model that accounts for the texture and defects is proposed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 2: Symposium – Defects in Semiconductors I , 1980 , 439
Copyright
Copyright © Materials Research Society 1981

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References

REFERENCES

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