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Tem Investigation of Strain Relaxation in ZnSe/ZnSxSe1−x Superlattices Grown by MBE

Published online by Cambridge University Press:  26 February 2011

J. Petruzzello ,
O. Boser  and
P. Kellawon
J. Petruzzello
Affiliation:
Philips Laboratories, North American Philips Corp., Briarcliff Manor, N.Y. 10510
O. Boser
Affiliation:
Philips Laboratories, North American Philips Corp., Briarcliff Manor, N.Y. 10510
P. Kellawon
Affiliation:
Philips Laboratories, North American Philips Corp., Briarcliff Manor, N.Y. 10510
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Abstract

The relaxation mechanisms of ZnSe/ZnSxSe1−x superlattices grown by molecular beam epitaxy was studied by transmission rAeclmn icroscopy. The relaxation of misfit strain occured in part by conventional misfit dislocations that reside in the superlattice-buffer layer interface and in part by dislocations pinned at individual layer interfaces of the superlattice. The generation of misfit dislocations at the superlattice-buffer layer interface is inhibited by the misfit strain between individual superlattice layers. Therefore a significant amount of overall strain is present even after 1 μm of growth. Because misfit dislocations are not sufficient in relief of the misfit strain cracks are able to propagate

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 629
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

1.Yokogawa, T., Ogura, M. and Kajiwara, T., Appl. Phys. Lett., 49 (25), 1702 (1986).Google Scholar
2.Fujita, S., Matsuda, Y. and Sasaki, A., Appl. Phys. Lett., 17 (9), 955 (1985).Google Scholar
3.Kobayashi, M., Kimura, R., Konagai, M. and Takahashi, K., J. of Crys. Growth, 81 495 (1987).Google Scholar
4.Katagiri, H., Kobayashi, M., Mino, N., Urabe, K., Konogai, M. and Takahashi, K., Trans. of IECE of Jap., 69 (4), 277 (1986).Google Scholar
5.Hull, R., Bean, J. C., Cerdeira, F., Fiori, A. T. and Gibson, J. M., Appl. Phys. Lett., 48 56 (1986).Google Scholar
6.Olego, D. J. and Shahzad, K. (private communication).Google Scholar
7.Matthews, J. W. and Blakeslee, A. E., J. of Crys. Growth, 27 118 (1974).Google Scholar
8.Petruzzello, J. (unpublished).Google Scholar
9.Olego, D. J., Shahzad, K., Petruzzello, J., and Cammack, D., Phys. Rev. B, (1987).Google Scholar
10.Matthews, J. W. ans Klokholm, E., Mat. Res. Bull., 7 213 (1972).Google Scholar