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Tem Investigation of Self-Organized Pbse Quantum Dots as a Function of Spacer Layer Thickness and Growth Temperature

Published online by Cambridge University Press:  10 February 2011

H. H. Kang ,
L. Salamanca-Riba ,
M. Pinczolits ,
G. Springholz ,
V. Holy  and
G. Bauer
H. H. Kang
Affiliation:
Materials and Nuclear Engineering Department, University of Maryland, College Park, Maryland, 20742
L. Salamanca-Riba
Affiliation:
Materials and Nuclear Engineering Department, University of Maryland, College Park, Maryland, 20742
M. Pinczolits
Affiliation:
Institut für Halbleiterphysik, Johannes Kepler Universtät, A-4040 Linz, Austria
G. Springholz
Affiliation:
Institut für Halbleiterphysik, Johannes Kepler Universtät, A-4040 Linz, Austria
V. Holy
Affiliation:
Institut für Halbleiterphysik, Johannes Kepler Universtät, A-4040 Linz, Austria
G. Bauer
Affiliation:
Institut für Halbleiterphysik, Johannes Kepler Universtät, A-4040 Linz, Austria
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Abstract

The study of the morphology, lateral and vertical correlation of self-organized PbSe quantum dots in Pb1−xEux Te is presented. The samples consist of quantum dot superlattices of n periods of (PbSe/Pb1−xEux Te) grown on PbTe/(111) BaF2 by the S-K mode using MBE. The Pb1−xEux Te spacer thickness was varied from 34.3nm to 312nm and the growth temperature was varied between 335°C and 380°C. Our TEM results show very good lateral and vertical correlation of the dots. The dots form an array with either a/b/c/a/b/c/... or a/a/a/... vertical stacking sequence along the [111] growth direction. The stacking sequence is accurately controlled by the thickness of the Pb1−xEux Te spacer layer thickness and the growth temperature. The best a/b/c/... spatial correlation was obtained for temperatures around 380°C and spacer thickness of ˜40nm. The dots are highly strained and form triangular pyramids with (111) bases and (100) facets as observed by AFM. The shape of the dots also varied with the Pb1−xEux Te spacer thickness. An analysis of the spatial correlation of the dots' size and shape with respect to spacer thickness and growth temperature is presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 583 , 1999 , 87
Copyright
Copyright © Materials Research Society 2000

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References

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