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Tem Characterization of Solid-Phase Epitaxy in Amorphized Polysilicon

Published online by Cambridge University Press:  28 February 2011

P.-H. Chang  and
R. Sundaresan
P.-H. Chang
Affiliation:
Central Research Laboratories, MS 147, Texas Instruments Incorporated, Dallas, TX 75265
R. Sundaresan
Affiliation:
Semiconductor Process and Design Center, MS 944, Texas Instruments Incorporated, Dallas, TX 75265.
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Abstract

Solid Phase Epitaxy (SPE) of amorphous silicon thin films can be employed to build novel device structures for VLSI applications. One way of achieving SPE is to use a room temperature silicon implant to amorphize a polysilicon layer followed by a thermal treatment to promote epitaxial growth. Both vertical SPE, in which the epitaxial film is grown directly on silicon substrate, and lateral SPE, in which the epitaxial growth is extended over a thin layer of oxide using the vertical SPE region as a seed, have been realized using this approach. This paper presents results obtained by cross-sectional TEM analysis of the epitaxial films, with particular emphasis on the effects of implant schedule and annealing conditions on the epitaxial regrowth.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 70: Symposium E – Materials Issues in Amorphous-Semiconductor Technology , 1986 , 71
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

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