No CrossRef data available.
Article contents
Tem Assessment of Different Mechanisms Contributing to Stress Relaxation in Strained InGaAs/InAlAs Systems
Published online by Cambridge University Press: 25 February 2011
Abstract
A study by Transmission Electron microscopy (TEM) of strained InGaAs/InAlAs systems on InP substrates is presented. The influence of the lattice mismatch, epilayer thickness and modulation of the lattice parameter on the morphology of the system is analyzed. A discussion of the strain relaxation mechanisms occurring for each growth morphology is also presented.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1992