Hostname: page-component-78c5997874-m6dg7 Total loading time: 0 Render date: 2024-11-05T04:17:15.219Z Has data issue: false hasContentIssue false
  • English
  • Français

Tem Assessment of Defects in (CdHg)Te Heterostructures

Published online by Cambridge University Press:  25 February 2011

S.G. Lawson-Jack ,
I.P. Jones ,
D.J. Williams  and
M.G. Astles
S.G. Lawson-Jack
Affiliation:
School of Metallurgy and Materials, University of Birmingham, Birmingham, United Kingdom
I.P. Jones
Affiliation:
School of Metallurgy and Materials, University of Birmingham, Birmingham, United Kingdom
D.J. Williams
Affiliation:
Royal Signals and Radar Establishments, Great Malvern, Worcs, United Kingdom
M.G. Astles
Affiliation:
Royal Signals and Radar Establishments, Great Malvern, Worcs, United Kingdom
Get access

Abstract

Transmission electron microscopy has been used to assess the defect contents of the various layers and interfaces in (CdHg) Te heterostructures. Examination of cross sectional specimens of these materials suggests that the density of misfit dislocations at the interfaces is related to the layer thicknesses, and that the high density of dislocations which are generated at the GaAs/CdTe interface are effectively prevented from penetrating into the CdHgTe epilayer by a 3um thick buffer layer. The majority of the dislocations in the layers were found to have a Burgers vector b = a/2<110> and either lie approximately parallel or inclined at an angle of ∼ 60° to the interfacial plane.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 216: Symposium T – Long-Wavelength Semiconductor Devices, Materials and Processes , 1990 , 65
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Nouruzi-Khorasani, A., Jones, I.P. and Dobson, P.S.: University of Birmingham, Project RU1-19, Annual report 1987.Google Scholar
2. Nouruzi-Khorasani, A., Jones, I.P. and Dobson, P.S.: University of Birmingham, Project RU1-19, Annual report 1988.Google Scholar
3. Lawson-Jack, S.G. and Jones, I.P.: University of Birmingham, Project RU1-23, Annual Report 1989.Google Scholar
4. Cullis, A.G., Chew, N.G. and Hutchison, J.L.: Ultramicroscopy, 17, 203, (1985).Google Scholar
5. Chew, N.G. and Cullis, A.G.: Ultramicroscopy, 23,175, (1987).Google Scholar
6. Williams, D.J. and Vere, A.W.: J. Vac. Sci. Technol. 4 (4), 2184, (1986).Google Scholar
7. Keir, A.M., Graham, A., Barnett, S.J., Geiss, J., Astles, M.G. and Irvine, S.J.: J. Crystal Growth, 101, 572, (1990).Google Scholar
8. Nouruzi-Khorasani, A., Jones, I.P., Dobson, P.S., Etem, Y., Williams, D.J., Astles, M.G., Ard, C. and Coates, G.: J. Crystal Growth,102, 819, (1990).Google Scholar
9. Hails, J.E., Russel, G.J., Brinkman, A.W. and Woods, J.: J. Appl. Phys., 60 (7), 2624, (1986).Google Scholar
10. Lawson-Jack, S.G.: PhD. Thesis, University of London, 1989.Google Scholar
11. Gough, J., Geiss, J., Mackett, P. and Keefe, I. O' (private communication).Google Scholar
12. Shin, S.H., Bajaj, J., Moudy, L.A. and Cheung, D.T.: Appl. Phys. Lett., 43 (1), 68, (1983).Google Scholar
13. Durose, K., Russell, G.J. and Woods, J.: J. Crystal Growth, 72, 85, (1985).CrossRefGoogle Scholar