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Tem and Hrem Study Of mGH-Temperature Aluminum Ion Implantation to 6H-SiC

Published online by Cambridge University Press:  10 February 2011

A. A. Suvorova ,
I. O. Usov ,
O. I. Lebedev ,
G. Van Tendeloo  and
A. V. Suvorov
A. A. Suvorova
Affiliation:
Ioffe Physical-Technical Institute, St. Petersburg, 194021 Russia
I. O. Usov
Affiliation:
Ioffe Physical-Technical Institute, St. Petersburg, 194021 Russia
O. I. Lebedev
Affiliation:
University of Antwerp (RUCA), B-2020 Antwerp, Belgium on leave from Institute of Crystallography RAS, 117333 Moscow, Russia
G. Van Tendeloo
Affiliation:
University of Antwerp (RUCA), B-2020 Antwerp, Belgium
A. V. Suvorov
Affiliation:
CREE Research Inc., Durham, 27703 NC, USA
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Abstract

6H silicon carbide wafers were implanted with 40–50 keV aluminum ions to a dose of 1.5 × 1014 – 1.5 × 1016 cm−2 at high temperatures (1100°C–1700°C). The substrate temperature and the implantation dose were varied to investigate the influence of the implantation parameters on the formation of structural defects. Conventional transmission electron microscopy (TEM) and high resolution electron microscopy (HREM) techniques were applied to study the defects. We found that for low dose implants {0001} interstitial dislocation loops are formed but for high dose implants aluminum precipitates associated with {0001} half-loops are formed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 512: Symposium F – Wide Bandgap Semiconductors for High Power, High Frequency , 1998 , 481
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

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