Hostname: page-component-cd9895bd7-7cvxr Total loading time: 0 Render date: 2024-12-24T17:17:25.700Z Has data issue: false hasContentIssue false
  • English
  • Français

TEM and EELS Study on TaOx-based Nanoscale Resistive Switching Devices

Published online by Cambridge University Press:  26 August 2015

Kate J. Norris ,
J. Joshua Yang  and
Nobuhiko P. Kobayashi
Kate J. Norris
Affiliation:
Baskin School of Engineering, University of California Santa Cruz, Santa Cruz, CA 95064 U.S.A Nanostructured Energy Conversion Technology and Research (NECTAR), Advanced Studies Laboratories, Univ. of California Santa Cruz – NASA Ames Research Center, Moffett Field, CA 94035
J. Joshua Yang
Affiliation:
Electrical and Computer Engineering, University of Massachusetts, Amherst, MA 01003 USA
Nobuhiko P. Kobayashi
Affiliation:
Baskin School of Engineering, University of California Santa Cruz, Santa Cruz, CA 95064 U.S.A Nanostructured Energy Conversion Technology and Research (NECTAR), Advanced Studies Laboratories, Univ. of California Santa Cruz – NASA Ames Research Center, Moffett Field, CA 94035
Get access

Abstract

Resistive switching, a reversible change in electrical resistance of a dielectric layer through the application of a voltage bias, has propelled a field of research to form improved non-volatile memory device. Tantalum oxide has been investigated as the dielectric component of resistive switching devices as a leading candidate for a few years. Presented here is a structural and chemical investigation of TaOx devices with 55nm in diameter in the virgin, forming on, and switched off (reset) states for comparison using cross sectional TEM techniques including HRTEM, and EELS to gain further understanding of this material system. The nanodevices imaged in this study were switched below 100µA. Unique features found in this study are in agreement with previous hypotheses made by various researchers based on X-ray fluorescence microscopy of micron-scale devices, indicating a variation in oxygen concentration around the switching area.

Keywords

memorynanoscaletransmission electron microscopy (TEM)
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1805: Symposium SS/TT – Fabrication and Properties of Oxide Thin Films, Nanostructures and Interfaces for Advanced Applications , 2015 , mrss15-2137789
Copyright
Copyright © Materials Research Society 2015 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Waser, R.; Aono, M. Nat. Mater. 2007, 6, 833–840.CrossRefGoogle Scholar
Williams, R. S. IEEE Spectr. 2008, 45, 28–35.CrossRefGoogle Scholar
Lee, H. Y.; Chen, P. S.; Wang, C. C.; Maikap, S.; Tzeng, P. J.; Lin, C. H.; Lee, L. S.; Tsai, M. J. Japanese J. Appl. Physics, Part 1 Regul. Pap. Short Notes Rev. Pap. 2007, 46, 2175–2179.CrossRefGoogle Scholar
Kim, K. M.; Choi, B. J.; Koo, B. W.; Choi, S.; Jeong, D. S.; Hwang, C. S. Electrochem. Solid-State Lett. 2006, 9, G343.CrossRefGoogle Scholar
Choi, B. J.; Ge, N.; Yang, J. J.; Zhang, M.-X.; Williams, R. S.; Norris, K. J.; Kobayashi, N. P. New materials for memristive switching. Circuits and Systems (ISCAS), 2014 IEEE International Symposium on, 2014, 2808–2811.CrossRefGoogle Scholar
Yang, J. J.; Pickett, M. D.; Li, X.; Ohlberg, D. a a; Stewart, D. R.; Williams, R. S. Nat. Nanotechnol. 2008, 3, 429–433.CrossRefGoogle Scholar
Joshua Yang, J.; Miao, F.; Pickett, M. D.; Ohlberg, D. a a; Stewart, D. R.; Lau, C. N.; Williams, R. S. Nanotechnology 2009, 20, 215201.CrossRefGoogle Scholar
Yao, J.; Zhong, L.; Natelson, D.; Tour, J. M. Sci. Rep. 2012, 2, 1–5.CrossRefGoogle Scholar
Park, G.-S.; Kim, Y. B.; Park, S. Y.; Li, X. S.; Heo, S.; Lee, M.-J.; Chang, M.; Kwon, J. H.; Kim, M.; Chung, U.-I.; Dittmann, R.; Waser, R.; Kim, K. Nat. Commun. 2013, 4, 2382.CrossRefGoogle Scholar
Miao, F.; Strachan, J. P.; Yang, J. J.; Zhang, M. X.; Goldfarb, I.; Torrezan, A. C.; Eschbach, P.; Kelley, R. D.; Medeiros-Ribeiro, G.; Williams, R. S. Adv. Mater. 2011, 23, 5633–5640.CrossRefGoogle Scholar
Kwon, D.-H.; Kim, K. M.; Jang, J. H.; Jeon, J. M.; Lee, M. H.; Kim, G. H.; Li, X.-S.; Park, G.-S.; Lee, B.; Han, S.; Kim, M.; Hwang, C. S. Nat. Nanotechnol. 2010, 5, 148–153.CrossRefGoogle Scholar
Yang, J. J.; Zhang, M. X.; Strachan, J. P.; Miao, F.; Pickett, M. D.; Kelley, R. D.; Medeiros-Ribeiro, G.; Williams, R. S. Appl. Phys. Lett. 2010, 97.Google Scholar
Lee, M.-J.; Lee, C. B.; Lee, D.; Lee, S. R.; Chang, M.; Hur, J. H.; Kim, Y.-B.; Kim, C.-J.; Seo, D. H.; Seo, S.; Chung, U.-I.; Yoo, I.-K.; Kim, K. Nat. Mater. 2011, 10, 625–630.CrossRefGoogle Scholar