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TEM Analysis of Threading Dislocations in ELO-GaN Grown with Controlled Facet Planes

Published online by Cambridge University Press:  17 March 2011

Noriyuki Kuwano ,
Kayo Horibuchi ,
Hideto Miyake  and
Kazumasa Hiramatsu
Noriyuki Kuwano
Affiliation:
Applied Science and Technology Center for Cooperative Research, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
Kayo Horibuchi
Affiliation:
Department of Applied Science for Electronics and Materials, Graduate School of Engineering Sciences, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
Hideto Miyake
Affiliation:
Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University, Tsu, Mie 514-8507, Japan
Kazumasa Hiramatsu
Affiliation:
Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University, Tsu, Mie 514-8507, Japan
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Abstract

Cross sectional transmission electron microscope (TEM) observation has been performed for specimens of ELO-GaN (ELO: epitaxial-lateral-overgrowth) in order to analyze the behavior of dislocations, with special reference to the effect of facet plane orientation and the size of mask. An ELO-GaN layer was grown overlying on a thick GaN layer with a patterned mask by MOVPE with a carrier gas of hydrogen (H2) under a low-ambient pressure. The growth temperature and the reactor-pressure were controlled in a two-step way during the growth of ELO-GaN layer in order to change the dominant facet-planes and the aspect ratio in growth rate. The experimental results revealed that (a+c)-type threading dislocations (TDs) show a 90-degree-bending in the specimen with slanting facets (2 1 1 2), but not in those with vertical ones (2110). a-type TDs run upward without bending irrespective of the orientation of the facet planes. Dislocations lying on (0001) planes, or horizontal dislocations (HDs), have been generated in the specimens with wide mask-terraces. It is thought that the formation of HDs relieved stresses in the ELO-GaN and then suppressed the bending of a-type TDs. In the specimens with narrow terraces, the both type TDs penetrate upward without bending and few HDs are generated. The behavior of dislocations is attributable to the fact that the small size of terrace generates small stresses and promotes a fast meeting of wings of ELO-GaN.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G11.59
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1. Amano, H., Sawaki, N., Akasaki, I. and Toyoda, Y.: Appl. Phys. Lett., 48, 353 (1986).Google Scholar
2. Nakamura, S.: Jpn. J. Appl. Phys., 30, L1705 (1991).Google Scholar
3. Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Kiyoku, H., Sugimoto, Y., Kozaki, T., Umemoto, H., Sano, M. and Chocho, K.: Jpn. J. Appl. Phys., 36, L1568 (1997).Google Scholar
4. Usui, A., Sunakawa, H., Sakai, A. and Yamaguchi, A. A.: Jpn. J. Appl. Phys., 36, L899 (1997).Google Scholar
5. Sakai, A., Sunakawa, H. and Usui, A.: Appl. Phys. Lett., 71, 2259 (1997).Google Scholar
6. Sakai, A., Sunakawa, H. and Usui, A.: Appl. Phys. Lett., 73, 481 (1998).Google Scholar
7. Sakai, A., Sunakawa, H., Kimura, A. and Usui, A.: Appl. Phys. Lett., 76, 442 (2000).Google Scholar
8. Kuwano, N., Tsukamoto, K., Taki, W., Horibuchi, K., Oki, K., Kawaguchi, Y., Shibata, T., Sawaki, N. and Hiramatsu, K.: J. Electr. Micros., 49, 331 (2000).Google Scholar
9. Horibuchi, K., Kuwano, N., Oki, K., Kawaguchi, Y., Sawaki, N. and Hiramatsu, K.: Phys. Stat. Sol., (a) 180, 171 (2000).Google Scholar
10. Horibuchi, K., Kuwano, N., Oki, K., Kawaguchi, Y., Sawaki, N. and Hiramatsu, K.: Extended Abstracts of 19th Electronic Materials Symposium. EMS-19, Izu-Nagaoka, (2000) p.163.Google Scholar
11. Miyake, H., Motogaito, A. and Hiramatsu, K.: Jpn. J. Appl. Phys., 38, L1000 (1999).Google Scholar
12. Miyake, H., Mizutani, H., Nishiyama, K., Motogaito, A., Hiramatsu, K., Iyechika, Y. and Maeda, T.: Proc. of Inter'l. Workshop on Nitride Semiconductors, IPAP Ser. 1., (2000), p.324.Google Scholar
13. Hiramatsu, K., Nishiyama, K., Motogaito, A., Miyake, H., Iyechika, Y. and Maeda, T., Phys. Stat. Sol., (a) 176, 535 (1999).Google Scholar
14. Hiramatsu, K., Nishiyama, K., Onishi, M., Mizutani, H., Narukawa, M., Motogaito, A., Miyake, H., Iyechika, Y. and Maeda, T.: to be published in Proc. of ICMOVPE-X.Google Scholar
15. Honda, Y., Iyechika, Y., Maeda, T., Miyake, H., Hiramatsu, K., Sone, H. and Sawaki, N.: Jpn. J. Appl. Phys. Lett., 38, L1299 (1999).Google Scholar