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Techniques of Insulator/Semiconductor Heterostructure Specimen Preparation

Published online by Cambridge University Press:  21 February 2011

D. Bahnck ,
J. L. Batstone  and
Julia M. Phillips
D. Bahnck
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
J. L. Batstone
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
Julia M. Phillips
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
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Abstract

Techniques for the preparation of specimens for Transmission Electron Microscopy analysis are described. Cross-sectional specimens of insulator/semiconductor heterostructures have been successfully prepared. The problem of differential thinning rates and interface amorphization during argon ion-milling have been overcome using low argon ion accelerating voltages and shallow angles of incidence. Techniques for preparation of plan view specimens include the preparation of silicon substrates for in-situ crystal growth in an ultrahigh vacuum Transmission Electron Microscope.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 115: Symposium W – Specimen Preparation for Transmission Electron Microscopy of Materials I , 1987 , 63
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

[1] See for example, Phillips, J. M. (1986) Mat. Res. Soc. Symp. Proc. 71, 97 (1986).Google Scholar
[2] Hardman Inc., Belleville, N.J. 07109.Google Scholar
[3] Bravman, J. C. and Sinclair, R. (1984) J. Elec. Mic. Tech. 1, 53 (1984) and T. T. Sheng and R. B. Marcus (1980) J., Electrochem. Soc. 127, 737 (1980).Google Scholar
[4] Fisher Scientific, 52 Fadem Rd. Springfield, N.J. 07081.Google Scholar
[5] Gatan Inc., 780 Commonwealth Dr. Warrendale, PA. 15086.Google Scholar
[6] Aremco Products Inc., P.O. Box 429 Ossining, N.Y. 10562.Google Scholar
[7] 3M Co., 3M Center St. Paul, MN 55144.Google Scholar
[8] Union Carbide Coating Service Dept., 1550 Polco St. Indianapolis, IN 46224.Google Scholar
[9] Ponce, F. A., Anderson, G. B., O'Keefe, M. A. and Schowalter, L. J. (1986) J. Vac. Sci. Tech. B4, 1121 (1986).Google Scholar
[10] See for example, South Bay Tech. Inc., 5209 Tyler Ave Temple City CA. 91780.Google Scholar
[11] Gibson, J. M., Batstone, J. L. and Tung, R. (1987) Appl. Phys. Lett. 51, 45 (1987) and M. L. McDonald, J. M. Gibson and F. C. Unterwald J. Sci. Inst. To appear.Google Scholar
[12] VCR Group Inc., 650 Fifth St. Suite 305, San Francisco, CA. 94107, Model D300.Google Scholar
[13] Dremel MFG Co., 4915 21st St. Racine, WI. 53406, Dremel Moto-Tool.Google Scholar
[14] Starlite, 111 Lancaster Ave., P.O. Box 990 Rosemont PA. 19010-0911, Round-Edge Wheel, #142010.Google Scholar