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Published online by Cambridge University Press: 01 February 2011
In our previous publications [1, 2] nickel diffusion and spreading resistance probe (SRP) measurements for quality control of metal induced lateral crystallization (MILC) of amorphous silicon (a-Si) were studied. Now we present TCAD modeling and an explanation of experimental results. By using ISE TCAD the Ni concentration distributions were calculated and compared with results obtained by experiments using SIMS analysis.