Hostname: page-component-586b7cd67f-r5fsc Total loading time: 0 Render date: 2024-11-25T17:47:25.798Z Has data issue: false hasContentIssue false
  • English
  • Français

Tantalum Pentoxide Gate Dielectrics Formed by Tantalum Oxidation

Published online by Cambridge University Press:  10 February 2011

C. Hobbs ,
R. Hegde ,
B. Maiti ,
R. Nagabushnam ,
L. La ,
K. Reid ,
A. Dip ,
L. Grove ,
J. Conner  and
V. Kaushik
...Show all authors
C. Hobbs
Affiliation:
Advanced Products Research and Development Lab, Motorola, Inc., 3501 Ed Bluestein Blvd., Austin, TX 78721
R. Hegde
Affiliation:
Advanced Products Research and Development Lab, Motorola, Inc., 3501 Ed Bluestein Blvd., Austin, TX 78721
B. Maiti
Affiliation:
Advanced Products Research and Development Lab, Motorola, Inc., 3501 Ed Bluestein Blvd., Austin, TX 78721
R. Nagabushnam
Affiliation:
Advanced Products Research and Development Lab, Motorola, Inc., 3501 Ed Bluestein Blvd., Austin, TX 78721
L. La
Affiliation:
Advanced Products Research and Development Lab, Motorola, Inc., 3501 Ed Bluestein Blvd., Austin, TX 78721
K. Reid
Affiliation:
Advanced Products Research and Development Lab, Motorola, Inc., 3501 Ed Bluestein Blvd., Austin, TX 78721
A. Dip
Affiliation:
Advanced Products Research and Development Lab, Motorola, Inc., 3501 Ed Bluestein Blvd., Austin, TX 78721
L. Grove
Affiliation:
Advanced Products Research and Development Lab, Motorola, Inc., 3501 Ed Bluestein Blvd., Austin, TX 78721
J. Conner
Affiliation:
Advanced Products Research and Development Lab, Motorola, Inc., 3501 Ed Bluestein Blvd., Austin, TX 78721
V. Kaushik
Affiliation:
Advanced Products Research and Development Lab, Motorola, Inc., 3501 Ed Bluestein Blvd., Austin, TX 78721
L. Prabhu
Affiliation:
Advanced Products Research and Development Lab, Motorola, Inc., 3501 Ed Bluestein Blvd., Austin, TX 78721
A. Anderson
Affiliation:
Advanced Products Research and Development Lab, Motorola, Inc., 3501 Ed Bluestein Blvd., Austin, TX 78721
S. Bagchi
Affiliation:
Advanced Products Research and Development Lab, Motorola, Inc., 3501 Ed Bluestein Blvd., Austin, TX 78721
J. Mendonca
Affiliation:
Advanced Products Research and Development Lab, Motorola, Inc., 3501 Ed Bluestein Blvd., Austin, TX 78721
P. Tobin
Affiliation:
Advanced Products Research and Development Lab, Motorola, Inc., 3501 Ed Bluestein Blvd., Austin, TX 78721
Get access

Abstract

Tantalum pentoxide (Ta2O5) films were formed by oxidizing thin tantalum (Ta) films on bare and NO-nitrided silicon substrates. The 43-400 Å thick Ta films were deposited using physical vapor deposition (PVD) and oxidized using O2 for 2-60 min at 550-800 C in a furnace or single wafer tool. Uniform and stoichiometric Ta2O5 films were successfully produced as determined from XRD, AES depth profiling, XTEM, and ellipsometric analysis. The nitridation pretreatment was found to minimize the interfacial Ta-Si reactions which occur during the oxidation. Well-behaved CV and IV curves were obtained from mercury probe measurements. No CV hysteresis was observed. An equivalent oxide thickness of 38 Å and a leakage current of 7×10−9 A/cm2 at +1V were obtained for a 120 Å thick Ta2O5 film on a 15 Å interfacial SiO2 layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 567: Symposium R – Ultrathin SiO2 and Higg-K Materials for ULSI Gate Dielectrics , 1999 , 379
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Tseng, H., O'Meara, D., Tobin, P., Wang, V., Guo, X., Hegde, R., Yang, I., Gilbert, P., Cotton, R. and Herbert, L., International Electron Devices Meeting, Technical Digest, IEEE, 1998, 793.Google Scholar
2 Tseng, H., Tsui, P., Tobin, P., Mogab, J., Kare, M., Wang, X., Ma, T., Hegde, R., Hobbs, C., Veteran, J., Hartig, M., Kenig, G., Wang, V., Blumenthal, R., Cotton, R., Tamagawa, T., Halpern, B., Cui, G. and Schmitt, J., International Electron Devices Meeting, Technical Digest, IEEE, 1997, 647.Google Scholar
3 Parker, C., Lucovsky, G., and Hauser, J., IEEE Electron Device Letters, 19, 106 (1998).10.1109/55.663529Google Scholar
4 Momiyama, Y., Minakata, H., and Suggi, T., Symposium on VLSI Technology, Digest of Technical Papers, IEEE, 1997, 135.Google Scholar
5 Chatterjee, A., Champman, R., Joyner, K., Otobe, M., Hattangady, S., Bevan, M., Brown, G., Yang, H., He, Q., Rogers, D., Fang, S., Kraft, R., Rotondaro, A., Terry, M., Brennan, K., Aur, S., Hu, J., Tsai, H., Jones, P., Wilk, G., Aoki, M., Rodder, M. and Chen, I., International Electron Devices Meeting, Technical Digest, IEEE, 1998, 777.Google Scholar
6 Rausch, N. and Burte, E., Microelectronics Journal, 24, 421 (1993).10.1016/0026-2692(93)90048-JGoogle Scholar
7 Treichel, H., Mitwalsky, A., Sandler, N., Tribula, D., Kern, W., and Lane, A., Advanced Materials for Optics and Electronics, 1, 299 (1992).10.1002/amo.860010607Google Scholar
8 McKinley, K. and Sandler, N., Proceedings Materials Research Society, 446, 299 (1996).10.1557/PROC-446-299Google Scholar
9 Sun, S. and Chen, T., IEEE Transactions on Electron Devices 44, 1027 (1997).10.1109/16.585562Google Scholar
10 Kamiyama, S., Suzuki, H., Watanabe, H., Sakai, A., Kimura, H., and Mizuki, J., J. Electrochemical Society, 141, 1246 (1994).10.1149/1.2054904Google Scholar
11 Atanassova, E., and Spassov, D., 21st International Conference on Microelectronics, Proceedings, IEEE, 1997, 613.Google Scholar
12 Spassov, D. and Atanassova, E., Int. J. Electronics, 84, 453 (1998).10.1080/002072198134562Google Scholar
13 Noya, A., Takeyama, M., Sasaki, K., Aoyagi, E. and Hiraga, K., J. Vac. Sci. Technol. A, 15, 253 (1997).10.1116/1.580521Google Scholar