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Tailored Si-Layers on Silicon Oxide Obtained by Thermal CVD

Published online by Cambridge University Press:  10 February 2011

G. Beaucarne ,
J. Poortmans ,
M. Caymax ,
J. Nijs  and
R. Mertens
G. Beaucarne
Affiliation:
IMEC vzw, Kapeldreef 75, 3001 Leuven, Belgium, [email protected]
J. Poortmans
Affiliation:
IMEC vzw, Kapeldreef 75, 3001 Leuven, Belgium, [email protected]
M. Caymax
Affiliation:
IMEC vzw, Kapeldreef 75, 3001 Leuven, Belgium, [email protected]
J. Nijs
Affiliation:
IMEC vzw, Kapeldreef 75, 3001 Leuven, Belgium, [email protected]
R. Mertens
Affiliation:
IMEC vzw, Kapeldreef 75, 3001 Leuven, Belgium, [email protected]
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Abstract

In this paper, a method to obtain by CVD Si layers on silicon oxide with the desired grain size is described, involving nucleation control through the growth parameters. Nucleation experiments are carried out with a hydrogen - dichlorosilane - HCl ambient at high temperature. The nucleus density is observed to drop to low values at a threshold HCl-flow. A qualitative explanation using concepts from atomistic nucleation theory is proposed. The effect of addition of diborane to the gas flow is investigated and appears to be small or non-existent . Finally, preliminary results of a thin-film crystalline silicon solar cell process applied on such layers are given to illustrate the potential of such layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 485: Symposium G – Thin Film Structures for Photovoltaics , 1997 , 89
Copyright
Copyright © Materials Research Society 1998

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References

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