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Tailorable Rectification: A study of Vertical Transport in AlGaN/GaN Heterostructures

Published online by Cambridge University Press:  21 March 2011

Madhusudan Singh ,
Jaspirt Singh  and
Umesh Mishra
Madhusudan Singh
Affiliation:
Department of Electric Engineering and Computer Science University of Michigan, Ann Arbor, MI 48109
Jaspirt Singh
Affiliation:
Department of Electric Engineering and Computer Science University of Michigan, Ann Arbor, MI 48109
Umesh Mishra
Affiliation:
Department of Electric Computer Engineering University of California, Santa Barbara, CA 93106
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Abstract

In this paper, we report calculations that show that a metal-polar semiconductor heterostructure can exhibit highly controllable non-linear current-voltage (I-V) characteristics. Change in barrier thickness can alter the characteristics from Schottky-like to ohmic in different bias regimes. The origin of these unusual effects is a large electric field (> 106 V/cm) and high sheet charge (∼1013 – 1014 cm-2) without doping, in the polar heterostructure. Theoretical calculation of the tunneling current density in these systems indicates that very interesting non-linear behaviour is shown by theseystems, ev en in the undoped case. Choice of suitable compositions of the materials and thicknesses can be used to tailor devices with desired characteristics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I11.38.1
Copyright
Copyright © Materials Research Society 2002

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