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Systematic Studies of Fullerene Derivative Electron Beam Resists

Published online by Cambridge University Press:  10 February 2011

A. P. G. Robinson ,
R. E. Palmer ,
T. Tada ,
T. Kanayama ,
E. J. Shelley ,
D. Philp  and
J. A. Preece
A. P. G. Robinson
Affiliation:
Nanoscale Physics Research Laboratory, School of Physics and Astronomy, The University of Birmingham, Birmingham, UK, [email protected].
R. E. Palmer
Affiliation:
Nanoscale Physics Research Laboratory, School of Physics and Astronomy, The University of Birmingham, Birmingham, UK, [email protected].
T. Tada
Affiliation:
Joint Research Center for Atom Technology, NAIR, 1–1-4 Higashi, Tsukuba, Ibaraki 305–8562, Japan.
T. Kanayama
Affiliation:
Joint Research Center for Atom Technology, NAIR, 1–1-4 Higashi, Tsukuba, Ibaraki 305–8562, Japan.
E. J. Shelley
Affiliation:
School of Chemistry, The University of Birmingham, Birmingham, UK.
D. Philp
Affiliation:
School of Chemistry, The University of Birmingham, Birmingham, UK.
J. A. Preece
Affiliation:
School of Chemistry, The University of Birmingham, Birmingham, UK.
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Abstract

We report systematic studies of the response of C60 derivatives to electron beam irradiation. Films of fourteen different mono, tris and tetra adduct methanofullerene C60 derivatives were produced by spin coating on hydrogen terminated silicon substrates. Exposure of the films to a 20 keV electron beam substantially altered the dissolution rate of the derivative films in organic solvents such as monochlorobenzene. All of the derivatives exhibited negative tone resist behaviour with sensitivities between ∼ 8.5 × 10-4 and ∼ 4 × 10-3 C/cm2 107, much higher than that of C60. Features with widths of ∼ 20 nm were produced using these compounds, and the etch ratios of the compounds were found to be more than twice those of a standard novolac based resist (SAL601).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 584 , 1999 , 115
Copyright
Copyright © Materials Research Society 2000

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