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Systematic Characterization of Pseudomorphic (110) Intrinsic SiGe Epitaxial Films for Hybrid Orientation Technology with Embedded SiGe Source/Drain

Published online by Cambridge University Press:  01 February 2011

Christine Ouyang ,
Anita Madan ,
Nancy Klymko ,
Jinghong Li ,
Richard Murphy ,
Horatio Wildman ,
Robert Davis ,
Conal Murray ,
Judson Holt  and
Siddhartha Panda
...Show all authors
Christine Ouyang
Affiliation:
[email protected], IBM, T J Watson Research Center, Route 134, Yorktown Heights, NY, 10598, United States, 914-945-2010, 914-945-2141
Anita Madan
Affiliation:
[email protected], IBM, S&TG, 2070 Route 52, Hopewell Junction, NY, 12533, United States
Nancy Klymko
Affiliation:
[email protected], IBM, S&TG, 2070 Route 52, Hopewell Junction, NY, 12533, United States
Jinghong Li
Affiliation:
[email protected], IBM, S&TG, 2070 Route 52, Hopewell Junction, NY, 12533, United States
Richard Murphy
Affiliation:
[email protected], IBM, S&TG, 2070 Route 52, Hopewell Junction, NY, 12533, United States
Horatio Wildman
Affiliation:
[email protected], IBM, S&TG, 2070 Route 52, Hopewell Junction, NY, 12533, United States
Robert Davis
Affiliation:
[email protected], IBM, S&TG, 2070 Route 52, Hopewell Junction, NY, 12533, United States
Conal Murray
Affiliation:
[email protected], IBM, T J Watson Research Center, S&TG, Route 134, Yorktown Heights, NY, 10598, United States
Judson Holt
Affiliation:
[email protected], IBM, S&TG, 2070 Route 52, Hopewell Junction, NY, 12533, United States
Siddhartha Panda
Affiliation:
[email protected], IBM, S&TG, 2070 Route 52, Hopewell Junction, NY, 12533, United States
Meikei Ieong
Affiliation:
[email protected], IBM, S&TG, 2070 Route 52, Hopewell Junction, NY, 12533, United States
Chun-Yung Sung
Affiliation:
[email protected], IBM, S&TG, 2070 Route 52, Hopewell Junction, NY, 12533, United States
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Abstract

PFET devices fabricated using embedded SiGe source/drain on (110) silicon substrates have shown significant performance improvement compared to PFETs with embedded SiGe on (100) SOI substrates. In this paper, we report a systematic material characterization on the epitaxial SiGe films, both on blanket and patterned substrates, and corresponding PFET performance data. The SiGe films were deposited in an RTCVD system. The epitaxial growth rate on (110) substrates was 30% lower than on (100), and 30% higher on patterned device wafers compared to blanket wafers. Films were characterized using an array of methods such as High Resolution XRD (for Ge composition, strain and thickness), Auger (for Ge composition), UV Raman microprobe (for strain), AFM (for surface morphology), and TEM (for epi quality). The Ge compositions determined by XRD and Auger are in excellent agreement (15~16%). The amount of strain extracted from the Raman measurements is also consistent with the amount determined by XRD, which is 0.60%, corresponding to a fully strained Si0.85Ge0.15 film. AFM showed much higher RMS and Rmax for the SiGe films on (110) substrates compared to those on (100) substrates. XTEM showed high crystalline quality with very low defect count in the SiGe source/drain and Si channel regions. PFETs with an embedded Si0.85Ge0.15 source/drain on hybrid orientation (HOT) substrates provided a 30% advantage in drive current and a 23% enhancement in ring oscillator speed compared to control devices on (100) SOI wafer.

Keywords

crystallinestress/strain relationshipchemical vapor deposition (CVD) (deposition)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 913: Symposium D – Transistor Scaling – Methods, Materials and Modeling , 2006 , 0913-D01-02
Copyright
Copyright © Materials Research Society 2006

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References

[1] Yang, M., Ieong, M., Shi, L., Chan, K., Chan, V., Chou, A., Gusev, E., Jenkins, K., Boyd, D., Ninomiya, Y., Pendleton, D., Surpris, Y., Heenan, D., Ott, J., Guarini, K., D'Emic, C., Cobb, M., Mooney, P., To, B., Rovedo, N., Benedict, J., Mo, R. and Ng, H., IEDM Tech. Dig., 453 (2003).Google Scholar
[2] Sung, C.-Y., Yin, H., Ng, H. Y., Saenger, K. L., Chan, V., Crowder, S. W., Li, J., Ott, J. A., Bendernagel, R., Kempisty, J. J., Ku, V., Lee, H.K., Luo, Z., Madan, A., Mo, R.T., Nguyen, P.Y., Pfeiffer, G., Raccioppo, M., Rovedo, N., Sadana, D., Souza, J.P. de, Zhang, R., Ren, Z. and Wann, C.H., IEDM Tech. Dig., 235 (2005).Google Scholar
[3] Ouyang, Q., Yang, M., Holt, J., Panda, S., Chen, H., Utomo, H., Fischetti, M., Rovedo, N., Li, J., Klymko, N., Wildman, H., Kanarsky, T., Costrini, G., Fried, D., Bryant, A., Ott, J. A., Ieong, M. and Sung, C.-Y., VLSI Symp. on Technologies, 28, (2005).Google Scholar
[4] Bowen, D.K. and Tanner, B. High Resolution X-ray Diffraction and Topography, 1st ed. (Taylor and Francis Ltd. London, 1998) p. 55–64.Google Scholar
[5] Brantley, W.A., J. Appl. Phys., 44(1), 534 (1973).Google Scholar
[6] Dismukes, J.P., Ekstrom, L., and Paff, R.J., J. Phys. Chem., 68(10), 3021 (1964).Google Scholar
[7] Tsang, J.C., Mooney, P.M., Dacol, F. and Chu, J., J. Appl. Phys. 75(12), 8098 (1994).Google Scholar
[8] Tiberj, A., Paillard, V., Aulnette, C., Daval, N., Bourdelle, K.K., Moreau, M., Kennard, M., and Cayrefourcq, I., in High-Mobility Group-1V Materials and Devices, edited by Caymax, M.. Rim, K., Zaima, S., Kasper, E. and Fichtner, P.F.P. (Mater. Res. Soc. Symp. Proc. 809, 2004) pp. 97–102.Google Scholar
[9] Brunner, K., in Properties of Silicon Germanium and SiGe:Carbon, edited by Kasper, E. and Lyutovich, K., (INSPEC, The Institution of Electrical Engineers, London, UK, 2000) p.115.Google Scholar