Epitaxial silicide growth is of great interest to many researchers and process engineers working in the field of microelectronics. The interest towards epitaxial silicides is due, firstly to the fact that these structures are suitable for systematic investigation of physics of a metal-semiconductor interface, and secondly that epitaxial intermetallic structures on silicon allow development of new devices such as threedimensional ones. At present, however, one can successfully form layers with epitaxial structure with thickness of no more than 150 nm using solid-state reaction in the metal layersilicon substrate system. Such values satisfy researchers dealing with problems of epitaxial growth because main processes occur in the range of 10–20 Å [1]From a technological point of view, however, it is desirable to form layers with thickness up to 1 μm.