Hostname: page-component-6d856f89d9-jrqft Total loading time: 0 Render date: 2024-07-16T06:16:45.251Z Has data issue: false hasContentIssue false
  • English
  • Français

Synthesis of Thin Membranes in Si Technology by Carbon Ion Implantation

Published online by Cambridge University Press:  21 February 2011

C. Serre ,
A. Pérez-rodríguez ,
L. Calvo-Barrio ,
A. Romano-RodríGuez ,
J.R. Morante ,
J. Esteve ,
M.C. Acero ,
W. Skorupa  and
R. Kögler
C. Serre
Affiliation:
Dept. Física Aplicada i Electrónica, Universitat de Barcelona, Spain
A. Pérez-rodríguez
Affiliation:
Dept. Física Aplicada i Electrónica, Universitat de Barcelona, Spain
L. Calvo-Barrio
Affiliation:
Dept. Física Aplicada i Electrónica, Universitat de Barcelona, Spain
A. Romano-RodríGuez
Affiliation:
Dept. Física Aplicada i Electrónica, Universitat de Barcelona, Spain
J.R. Morante
Affiliation:
Dept. Física Aplicada i Electrónica, Universitat de Barcelona, Spain
J. Esteve
Affiliation:
CNM-CSIC, campus UAB, E-08193 Bellaterra, Spain
M.C. Acero
Affiliation:
CNM-CSIC, campus UAB, E-08193 Bellaterra, Spain
W. Skorupa
Affiliation:
Forschungszentrum Rossendorf e.V.,Institut für Ionenstrahlphysik und Material forschung Postfach 510119, D-01314 Dresden, Germany
R. Kögler
Affiliation:
Forschungszentrum Rossendorf e.V.,Institut für Ionenstrahlphysik und Material forschung Postfach 510119, D-01314 Dresden, Germany
Get access

Abstract

The use of high dose carbon ion implantation in Si for the production of ultrathin membranes is investigated. Carbon implantations with doses up to 1018 cm-8 and energies up to 300 keV, at room temperature and 500°C were used, followed by 10 hours annealing at 1150°C. Structural and chemical analysis has been performed (including TEM, XPS, Raman and IR spectroscopies), and the etch properties have been investigated for KOH and TMAH etchants. It is found that doses higher than 1017 cm-2 are needed to obtain efficient etch-stop layers in TMAH, independently of the annealing conditions, while in contrast with previous work, it was not possible to obtain satisfactory results using KOH. According to this, ultrathin crystalline membranes (below 500 nm thick) with average surface roughness as low as 4.8 nm, measured by AFM, were obtained, and the structural analysis revealed the formation of a highly stable buried layer of crystalline β-SiC precipitates aligned with the Si matrix. These results corroborate the ability of high dose C ion implantation to obtain buried layers usable for micomachining applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 396: Symposium A – Ion-Solid Interactions for Materials Modification and Processing , 1995 , 727
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Krötz, G., legner, W., Wagner, Ch., Möller, H., Sonntag, H. and Müller, G., 8th International Conference on Solid-State Sensors and Actuators and Eurosensors IX, Stockolm, Sweden, June 25-29, 1995, Digest of technical papers, 2, 186.Google Scholar
2 Wagner, Ch., Krötz, G., Sonntag, H., Möller, H., Müller, G. and Kalbitzer, S., 8th International Conference on Solid-State Sensors and Actuators and Eurosensors IX, Stockolm, Sweden, June 25-29, 1995, Digest of technical papers, 2, 194.Google Scholar
3 Krötz, G., Wagner, Ch., legner, W., Sonntag, H., Möller, H. and Müller, G., International Conference on SiC and Related Materials - ICSCRM-95 -, Kyoto, Japan, 1995, Technical Digest, ThA-III-6, 601.Google Scholar
4 Deguchi, M., Kitabatake, M., Hirao, T., Arai, N., Izumi, T., Jpn. J. Appl. Phys 31 (1992) 343.Google Scholar
5 Martin, P., Daudin, B., Dupuy, M., Ermolieff, A., Olivier, M., Papon, A.M., Rolland, G., J. Appl. Phys. 67 (1990) 2908.Google Scholar
6 Nejim, A., Hemment, P.L.F., Stoemenos, J., Proceedings of the 6th International Symposium on SOI Technology and Devices, S. Cristoloveanu (ed.), The Electrochemical Society Proceedings vol. 94-11 (1994), p. 167.Google Scholar
7 Serre, C., Pérez-Rodríguez, A., Romano-Rodríguez, A., Morante, J.R., Kögler, R. and Skorupa, W., Journal of Applied Physics 77 (7), 1995, 2978–2984.Google Scholar
8 Romano-Rodríguez, A., Serre, C., Calvio-Barrio, L., Pérez-Rodríguez, A., Morante, J. R., Kögler, R. and Skorupa, W., Materials Science and Engineering B, to be published.Google Scholar
9 Feijoo, D., Lehmann, V., Mitani, K., Gösele, U.M., J. Electrochem. Soc. 139 (1992) 2309.Google Scholar
10 Acero, M.C., Esteve, J., Monterrat, J., Bausells, J., Romano-Rodríguez, A., Pérez-Rodríguez, A., Morante, J.R., Sensors and Actuators A 45 219-225 (1994).Google Scholar
11 De Veirman, A., Van Landuyt, J., Skorupa, W., Philosophical Magazine A 64 (1991) 513.Google Scholar
12 Fröse, D., Kollewe, D. and von Munch, W., Nuclear Instruments and Methods in Physics, B79 (1993), 668.Google Scholar