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Synthesis of Si1-xGex-on-Insulator by 74Ge+ Ion Implantation in a Simox Substrate

Published online by Cambridge University Press:  22 February 2011

C.J. Patel ,
C.D. Marsh ,
U. Magnusson ,
C. Jeynes ,
M. Ostling ,
H NorströM ,
G.R. Booker  and
J.B. Butcher
C.J. Patel
Affiliation:
Middlesex University, Microelectronics Centre, Bounds Green Road, London, UK
C.D. Marsh
Affiliation:
University of Oxford, Dept. of Materials, Parks Road, Oxford, UK
U. Magnusson
Affiliation:
Industriellt Mikroelektronik Centrum, Isafjordsgatan 22, S-164 21 Kista, Sweden
C. Jeynes
Affiliation:
University of Surrey, Dept. of Elect. & Elec. Eng. Guildford, Surrey, UK
M. Ostling
Affiliation:
Royal Institute of Technology, Electrum 229, S-164 28 Kista, Sweden
H NorströM
Affiliation:
Industriellt Mikroelektronik Centrum, Isafjordsgatan 22, S-164 21 Kista, Sweden
G.R. Booker
Affiliation:
University of Oxford, Dept. of Materials, Parks Road, Oxford, UK
J.B. Butcher
Affiliation:
Middlesex University, Microelectronics Centre, Bounds Green Road, London, UK
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Abstract

A single crystalline Si1-xGex overlayer on insulator is realised by the implantation of germanium into a SIMOX (Separation by IMplantation of OXygen) substrate. Two SIMOX samples were implanted with 74Ge+ at elevated temperature (≈600°C), and subsequently annealed at different temperatures and anneal ambients. The microstructure, stoichiometry, and conductivity of the Si1-xGex over-layer were studied using transmission electron microscopy, Rutherford backscattering spectrometry/ion channelling and two-probe conductivity measurements. As a result of lattice reordering after final heat treatment, and despite high defect density observed in the XTEM microstructure, the measured conductivity of the over-layer is higher than of the starting SIMOX material. These results suggest a possibility of band-gap engineering by synthesis of Si1-xGex-on-insulator.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 316: Symposium A – Materials Synthesis and Processing Using Ion Beams , 1993 , 825
Copyright
Copyright © Materials Research Society 1994

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References

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