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Synthesis of New Copper(I) β-Diketonate Compounds for CVD of Copper

Published online by Cambridge University Press:  25 February 2011

H.K. Shin ,
K.-M. Chi ,
M.J. Hampden-Smith ,
T.T. Kodas ,
J.D. Farr  and
M.F. Paffeif
H.K. Shin
Affiliation:
Departments of Chemistry, Los Alamos National Laboratories, Los Alamos, NM 87545
K.-M. Chi
Affiliation:
Departments of Chemistry, Los Alamos National Laboratories, Los Alamos, NM 87545
M.J. Hampden-Smith
Affiliation:
Departments of Chemistry, Los Alamos National Laboratories, Los Alamos, NM 87545
T.T. Kodas
Affiliation:
Chemical Engineering; and Los Alamos National Laboratories, Los Alamos, NM 87545
J.D. Farr
Affiliation:
Chemical Engineering; and Los Alamos National Laboratories, Los Alamos, NM 87545
M.F. Paffeif
Affiliation:
Center for Micro-Engineered Ceramics, University of New Mexico, Albuquerque, NM 87131 CLS-1, Los Alamos National Laboratories, Los Alamos, NM 87545
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Abstract

A series of (0β-diketonate) copper(l) trimethylphosphine compounds has been prepared. These species exist either as liquids or low-melting solids at room temperature. The utility of these compounds as precursors for Chemical Vapor Deposition (CVD) of copper has been examined under a variety of conditions. High purity films with low resistivities have been deposited under a variety of conditions. Selective copper deposition was observed as a function of the substrate, precursor and substrate temperature. Evidence consistent with thermallyinduced disproportionation of the title compounds to form copper metal and copper(II) (β-diketonate)2 during deposition was observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 204: Symposium E – Chemical Perspectives of Microelectronic Materials II , 1990 , 421
Copyright
Copyright © Materials Research Society 1991

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References

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