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Synthesis of Highly Photosensitive a-SiC:H Films at High Deposition Rate by Plasma Decomposition of SiH4 and C2H2

Published online by Cambridge University Press:  26 February 2011

Y. Nakayama ,
S. Akita ,
K. Wakita  and
T. Kawamura
Y. Nakayama
Affiliation:
Electrical Engineering, College of Engineering, University of Osaka Prefecture, Mozu-Umemachi, Sakai, Osaka 591, JAPAN
S. Akita
Affiliation:
Electrical Engineering, College of Engineering, University of Osaka Prefecture, Mozu-Umemachi, Sakai, Osaka 591, JAPAN
K. Wakita
Affiliation:
Electrical Engineering, College of Engineering, University of Osaka Prefecture, Mozu-Umemachi, Sakai, Osaka 591, JAPAN
T. Kawamura
Affiliation:
Electrical Engineering, College of Engineering, University of Osaka Prefecture, Mozu-Umemachi, Sakai, Osaka 591, JAPAN
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Abstract

Highly photosensitive a-SiC:H films exhibiting ημτ-product more than 10−6 cm2/V at the band gap of 1.9 eV are prepared under the high deposition rate around 6μm/h by a plasma decomposition of SiH4-C2H2 source mixture gas at higher rf power. It is also shown that the SiH4-C2H2 gas system has a feature of the carbon incorporation into the films with the content nearly equal to that in the source mixture gas and hence is suitable for the high rate deposition process. This advantage and in addition the requirement of the higher rf power for obtaining the films with good electrical performance are discussed in terms of the dissociation reaction of the source gas and the secondary gas phase reactions in the plasma.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988 , 73
Copyright
Copyright © Materials Research Society 1988

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References

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