Hostname: page-component-cd9895bd7-gbm5v Total loading time: 0 Render date: 2024-12-27T02:25:03.955Z Has data issue: false hasContentIssue false
  • English
  • Français

Synthesis of GaAs Nano-Particles by Digital rf-sputtering

Published online by Cambridge University Press:  10 February 2011

M. Hirasawa ,
N. Ichikawa ,
Y. Egashira  and
H. Komiyama
M. Hirasawa
Affiliation:
Department of Chemical Systems Engineering, University of Tokyo, 113, Japan
N. Ichikawa
Affiliation:
Department of Chemical Systems Engineering, University of Tokyo, 113, Japan
Y. Egashira
Affiliation:
Department of Chemical Systems Engineering, University of Tokyo, 113, Japan
H. Komiyama
Affiliation:
Department of Chemical Systems Engineering, University of Tokyo, 113, Japan
Get access

Abstract

Nanometer-sized GaAs particles embedded in SiO2 were prepared by a digital rf-sputtering method, where GaAs and SiO2 targets were alternately sputtered in an Ar atmosphere. The GaAs deposition time was kept shorter than the time required to form a continuous layer. Transmission electron microscopy (TEM) observations showed that the sizes of the GaAs particles can be controlled from 2 to 8 nm by changing the sputtering cycle time of the GaAs target. In spite of their small size, the GaAs particles have crystallinity similar to the target material without substrate heating or post annealing. It was also revealed that the mechanism of the particle growth depend on the surface migration of the precursors. The optical absorption spectra of the GaAs particles show a blue shift as large as 1.6 eV, corresponding to strong quantum confinement of electrons and holes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 421: Symposium D – Compound Semiconductor Electronics and Photonics , 1996 , 139
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Hanamura, E., Phys. Rev. B. 38, 1228 (1988)Google Scholar
2 Takagahara, T. and Hanamura, E., Phys. Rev. Lett. 56, 2533 (1996)Google Scholar
3 Schmitt-Rink, S., Miller, D. A. B. and Chember, D. S., Phys. Rev. B. 35, 8113 (1987)Google Scholar
4 Kawaguchi, T. and Miyazima, S., Jpn. J. Appl. Phys. 32, L215 (1993)Google Scholar
5 Wang, Y. and Herron, N., J. Phys. Chem. 91, 257 (1987)Google Scholar
6 Dvorak, M. D., Justus, B. L., Gaskill, D. K. and Hendershot, D. G., Appl. Phys. Lett. 66. 804 (1995)Google Scholar
7 Sercel, P. C., Saunders, W. A., Atwater, H. A., Vahala, K. J. and Flagan, R. C., Appl. Phys. Lett. 61. 696 (1992)Google Scholar
8 Uchida, H., Crutis, C. J., Kamat, P. V., Jones, K. M. and Nozik, A. J., J. Phys. Chem. 96. 1156 (1992)Google Scholar
9 Maeda, Y., Tsukamoto, N., Yazawa, Y., Kanemitsu, Y. and Masumoto, Y., Appl. Phys. Lett. 59. 3168 (1991)Google Scholar
10 Nasu, H., Matsuoka, J. and Kamiya, K., J. Non-Crystalline Solids 178, 148 (1994)Google Scholar
11 Sedeek, K., J. Phys. D: Appl. Phys. 26, 130 (1993)Google Scholar
12 Brus, L., J. Phys. Chem. 90, 2555 (1986)Google Scholar