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Synthesis of Epitaxial Silicon Carbide Films by Laser CVD

Published online by Cambridge University Press:  26 February 2011

Hirohide Nakamatsu ,
Kazuhiko Hirata  and
Shichio Kawai
Hirohide Nakamatsu
Affiliation:
The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567, JAPAN
Kazuhiko Hirata
Affiliation:
The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567, JAPAN
Shichio Kawai
Affiliation:
The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567, JAPAN
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Abstract

ArF exciraer laser CVD was performed to give epitaxial SiC films on the sapphire or (α-A12O3 (0001) substrate. The rate of film growth was limited by the diffusion of the supplied gases. Small amounts of the gas supply failed to produce the SiC deposition and etched the substrate. The UV light irradiation of the substrate was necessary for the photo-excitation to grow the adherent epitaxial films. Filtered UV light from a D2 lamp revealed that the light with the wavelength shorter than about 310nm was effective for the epitaxial growth. It was found to be essential to excite intermediate products or by-products in the absorbed layer on the substrate. The epitaxial SiC films on the αA12O3 gave blue photoluminescence which may be ascribed to the superstructure of 3C-type SiC crystals.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 101: Symposium B – Laser and Particle-Beam Chemical Processing for Microelectronics , 1987 , 397
Copyright
Copyright © Materials Research Society 1998

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References

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