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Synthesis of Bulk, Polycrystalline Gallium Nitride at Low Pressures

Published online by Cambridge University Press:  10 February 2011

Alberto Argoitia ,
John C. Angus ,
Cliff C. Hayman ,
Long Wang ,
Jeffrey S. Dyck  and
Kathleen Kash
Alberto Argoitia
Affiliation:
Chemical Engineering Dept.,
John C. Angus
Affiliation:
Chemical Engineering Dept.,
Cliff C. Hayman
Affiliation:
Chemical Engineering Dept.,
Long Wang
Affiliation:
Materials Science and Engineering Dept.,
Jeffrey S. Dyck
Affiliation:
Physics Dept. Case Western Reserve University, Cleveland, OH 44106
Kathleen Kash
Affiliation:
Physics Dept. Case Western Reserve University, Cleveland, OH 44106
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Abstract

Bulk, polycrystalline gallium nitride was crystallized from gallium saturated with nitrogen obtained from a microwave electron cyclotron resonance source. The polycrystalline samples are wurtzitic and n-type. Well-faceted crystals give near-band-edge and yellow band photoluminescence at both 10K and 300K. The results show that atomic nitrogen is an attractive alternative to high pressure molecular nitrogen for saturation of gallium with nitrogen for synthesis of bulk gallium nitride.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 47
Copyright
Copyright © Materials Research Society 1997

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References

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