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Synthesis of Boron Carbide Nanowires and Nanocrystal Arrays by Plasma Enhanced Chemical Vapor Deposition

Published online by Cambridge University Press:  09 August 2011

Daqing Zhang ,
B. G. Kempton ,
D. N. Mcllroy ,
Yongjun Geng  and
M. Grant Norton
Daqing Zhang
Affiliation:
Department of Physics, Engineering and Physics Building, University of Idaho, Moscow, Idaho 83844–0903.
B. G. Kempton
Affiliation:
Department of Physics, Engineering and Physics Building, University of Idaho, Moscow, Idaho 83844–0903.
D. N. Mcllroy
Affiliation:
Department of Physics, Engineering and Physics Building, University of Idaho, Moscow, Idaho 83844–0903.
Yongjun Geng
Affiliation:
School of Mechanical and Materials Engineering, Washington State University, Pullman,Washington 99164–2920
M. Grant Norton
Affiliation:
School of Mechanical and Materials Engineering, Washington State University, Pullman,Washington 99164–2920
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Abstract

A plasma enhanced chemical vapor deposition technique has been developed to grow single crystal boron carbide nanowires and nanonecklace arrays using the single precursor closo-l,2-dicarbadodecaborane (C2B10H12). Nanowire and nanonecklace growth is expedited by Fe seeding of the substrate. Using the compound Fe-(C5H5)2 as an Fe source, it has been demonstrated that the density of nanowires, as well as the types of nanostructures that grow, can be tailored by controlling the concentration of Fe deposited onto the substrate surface prior to boron carbide deposition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 536: Symposium F – Microcrystalline & Nanocrystalline Semiconductors - 1998 , 1998 , 323
Copyright
Copyright © Materials Research Society 1999

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