Hostname: page-component-586b7cd67f-rcrh6 Total loading time: 0 Render date: 2024-11-25T17:40:36.928Z Has data issue: false hasContentIssue false

Synthesis and Raman Spectra of Cupric Oxide Quantum Dots

Published online by Cambridge University Press:  10 February 2011

J.F. Xu
Affiliation:
Department of Physics, National University of Singapore, Lower Kent Ridge Road, Singapore 119260, Republic of Singapore
W. Ji
Affiliation:
Department of Physics, National University of Singapore, Lower Kent Ridge Road, Singapore 119260, Republic of Singapore
Z.X. Shen
Affiliation:
Department of Physics, National University of Singapore, Lower Kent Ridge Road, Singapore 119260, Republic of Singapore
S.H. Tang
Affiliation:
Department of Physics, National University of Singapore, Lower Kent Ridge Road, Singapore 119260, Republic of Singapore
X.R. Ye
Affiliation:
Department of Chemistry, Nanjing University, Nanjing 210093, P. R. China
D.Z. Jia
Affiliation:
Department of Chemistry, Nanjing University, Nanjing 210093, P. R. China
X.Q. Yin
Affiliation:
Department of Chemistry, Nanjing University, Nanjing 210093, P. R. China
Get access

Abstract

We have synthesised CuO quantum dots by using a method of one-step solid state reaction under ambient conditions, and investigated them by X-ray diffraction (XRD), transmission electron microscopy (TEM), and Raman scattering technique. The XRD shows that the sample is composed of single phase CuO with a monoclinic structure. The particle size estimated from the x-ray diffraction peaks is about 12 nm, consistent with the TEM result. The Raman spectra show that there are three Raman peaks at 282, 332 and 618 cm−1, which are much broader and shifted several cm−l to lower frequencies in comparison with those of bulk CuO crystal. The temperature dependence of the Raman spectra in the range 77–873 K is also presented.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Wilson, W. L., Szajowski, P. F., and Brus, L. E., Science 262, 1242 (1993).10.1126/science.262.5137.1242Google Scholar
2. Ohtsuka, S., Koyama, T., Tsunetomo, K., Nagata, H., and Tanaka, S., Appl. Phys. Lett. 61, 2953 (1992).10.1063/1.108028Google Scholar
3. Okamoto, H., Matsuoka, J., Nasu, H., and Kamiya, K., J. Appl. Phys. 75, 2251 (1994).10.1063/1.356288Google Scholar
4. Xu, Jianfeng, Mao, Haitao, Sun, Yue, and Du, Youwei, J. Vac. Sci. Tech. B 15, 1465 (1997).10.1116/1.589475Google Scholar
5. Rakhshni, A. E., Solid-State Electron. 29, 7 (1986).10.1016/0038-1101(86)90191-7Google Scholar
6. Shimokawabe, M., Hatakeyama, N., Shimada, K., Tadokoro, K., and Takezawa, N., Appl. Catal. A: General 87, 205 (1992).10.1016/0926-860X(92)80056-IGoogle Scholar
7. Brookshier, M. A., Chusuei, C. C., and Goodman, D. W., Langmuir 15, 2043 (1999).10.1021/la981325kGoogle Scholar
8. Zou, B. S., Zhang, G. L., Tang, G. Q., and Chen, W. J., Acta Phys. Sinica 3, 303 (1994).Google Scholar
9. Guha, S., Peebles, D., and Wieting, T. J., Phys. Rev. B 43, 13092 (1991).10.1103/PhysRevB.43.13092Google Scholar