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Synthesis and Processing of Nanocrystalline Ge:Si Materials

Published online by Cambridge University Press:  21 February 2011

Shih-Tung Ngiam ,
Klavs F. Jensen  and
K. D. Kolenbrander
Shih-Tung Ngiam
Affiliation:
Department of Chemical Engineering
Klavs F. Jensen
Affiliation:
Department of Chemical Engineering Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge MA 02139, USA
K. D. Kolenbrander
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge MA 02139, USA
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Abstract

Crystalline nanometer-scale Ge particles have been synthesized by pulsed laser ablation and introduced into a Si host matrix, grown by chemical beam epitaxy from disilane. The proposed structure of the Ge:Si composite films consists of Ge nanocrystals surrounded by a thin epitaxial Si shell that passivates the surface of the Ge nanocrystallite. The Ge nanocrystallites are randomly oriented with respect to each other and are randomly distributed in a polycrystalline or amorphous Si matrix. Ge nanoparticles with and without Si matrix were deposited directly on C-coated TEM grid and imaged by high resolution TEM. Ge:Si composites deposited on Si wafers were characterized by RBS.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 326: Symposium M – Growth, Processing, and Characterization of Semiconductor Heterostructures , 1993 , 263
Copyright
Copyright © Materials Research Society 1994

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