Hostname: page-component-78c5997874-dh8gc Total loading time: 0 Render date: 2024-11-06T05:12:49.683Z Has data issue: false hasContentIssue false

Synthesis and Characterization of Self-Assembled Piezoelectric ZnO Nanostructures and Integration with Si Processing

Published online by Cambridge University Press:  01 February 2011

A. V. Cresce
Affiliation:
Dept. of Materials & Nuclear Engineering, U. of Maryland, College Park, MD 20742, USA
H. A. Ali
Affiliation:
Dept. of Electrical & Computer Engineering, U. of Maryland, College Park, MD 20742, USA
A. A. Iliadis
Affiliation:
Dept. of Electrical & Computer Engineering, U. of Maryland, College Park, MD 20742, USA
U. Lee
Affiliation:
Army Research Laboratory, Adelphi, MD, USA.
P. Kofinas
Affiliation:
Dept. of Chemical Engineering, U. of Maryland, College Park, MD 20742
Get access

Abstract

The formation of 10 nm self-assembled ZnO nanoparticles on Si and SiO2/Si surfaces, using diblock copolymers, and wet chemical processing compatible with semiconductor manufacturing, is reported. The diblock copolymer, consisting of norbornene and a norbornenedicarboxcylic acid blocks with a 400 to 50 repeat unit ratio, was synthesized by ring opening metathesis polymerization. The microphase separation of the block copolymer was employed to grow spherical self-assembled ZnO nanoparticles The self-assembly of the inorganic nanoparticles was achieved at room temperature in the liquid phase by incorporating ZnCl2 to the carboxylic acid block, or by exposure of a solid film to diethyl zinc vapors. Subsequent room temperature wet chemical processing of the doped films resulted in the formation of zinc oxide, followed by the saturation of double bonds in the polymer backbone. The formation of ZnO was verified by x-ray photoelectron spectroscopy (XPS). Transmission electron microscopy (TEM ) micrographs show the size and distribution of the zinc oxide nanoclusters in the polymer matrix. This study provided information on the formation of zinc oxide structures in a self-assembled polymer matrix, with the intention of controlling the shape and distribution of zinc oxide domains. The doped diblock copolymer was applied on Si and SiO2/Si wafers, by standard spinon techniques, and its photolithographic patterning metalization was developed.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Bates, Frank S., Science 251, 895905 (1991).Google Scholar
2. Thomas, E.L., Lescanec, R.L., Phil. Trans. R. Soc. Lond. A 348, 149166 (1994).Google Scholar
3. Duffy, M.T., in “Heteroepitaxial Semiconductors for Electronic Devices”, Cullen, G.W. and Wang, C.C., Editors, (Springer-Verlag, New York, 1977) Chapter 4, p. 150.Google Scholar
4. Clay, R.T., Cohen, R.E. Supramolecular Science 2, 183191 (1995).Google Scholar
5. Sohn, B.H., Cohen, R.E. Chem. Mater. 9, 264269 (1997).Google Scholar
6. Ciebien, J.F., Clay, R.T., Sohn, B.H., Cohen, R.E., New J. Chem. 22, 685691 (1998).Google Scholar