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Synthesis and Characterization of MoS2 Thin Films Grown by Pulsed Laser Evaporation

Published online by Cambridge University Press:  28 February 2011

M. S. Donley ,
P. T. Murray  and
N. T. McDevitt
M. S. Donley
Affiliation:
AFWAL/MLBM, Materials Laboratory, Wright-Patterson AFB, OH 45433
P. T. Murray
Affiliation:
Research Institute, University of Dayton, Dayton, OH 45469
N. T. McDevitt
Affiliation:
AFWAL/MLBM, Materials Laboratory, Wright-Patterson AFB, OH 45433
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Abstract

The growth and characterization of MoS thin films grown by pulsed laser evaporation is investigated. TOF anafysis of the ions evaporated from an MoS2 target indicates that PLE results primarily in the evaporation of atomic Mo and S species; MoxSy clusters were also detected, but were present at a significantly Iower intensity. TOF velocity analysis indicates an effective plasma temperature of 1500K. Stoichiometric MoS2 films were grown at substrate temperatures between room temperature and 500ºC under the above laser conditions. XPS data is used to develop a Wagner chemical state plot. Analysis of the films by Raman spectroscopy and glancing angle x-ray diffraction indicates the films to be crystalline, hexagonal MoS2, with a tendency for basal plane orientation parallel to the substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 140: Symposium S – New Materials Approaches to Tribology: Theory and Applications , 1988 , 277
Copyright
Copyright © Materials Research Society 1989

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