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Synchrotron X-ray Topography Studies of Epitaxial Lateral Overgrowth of GaN on Sapphire

Published online by Cambridge University Press:  10 February 2011

Patrick J. Mcnally ,
T. Tuomi ,
R. Rantamaki ,
K. Jacobs ,
L. Considine ,
M. O'hare ,
D. Lowney  and
A. N. Danilewsky
Patrick J. Mcnally
Affiliation:
Microelectronics Research Laboratory, Dublin City University, Dublin 9, Ireland.
T. Tuomi
Affiliation:
Optoelectronics Laboratory, Helsinki University of Technology, 02015 TKK, Finland.
R. Rantamaki
Affiliation:
Optoelectronics Laboratory, Helsinki University of Technology, 02015 TKK, Finland.
K. Jacobs
Affiliation:
Dept of Information Technology (INTEC), Univ. of Gent, B-9000, Belgium.
L. Considine
Affiliation:
Thomas Swan & Co. Ltd., Harston, Cambridge CB2 5NX, U.K.
M. O'hare
Affiliation:
Microelectronics Research Laboratory, Dublin City University, Dublin 9, Ireland.
D. Lowney
Affiliation:
Microelectronics Research Laboratory, Dublin City University, Dublin 9, Ireland.
A. N. Danilewsky
Affiliation:
D-79108 Freiburg, Germany.
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Abstract

Synchrotron white beam x-ray topography techniques, in section and large-area transmission modes, have been applied to the evaluation of ELOG GaN on A12O3. Using the openings in 100 nm thick SiO2 windows, a new GaN growth took place, which resulted in typical overgrowth thicknesses of 6.8 μm. Measurements on the recorded Laue patterns indicate that the misorientation of GaN with respect to the sapphire substrate (excluding a 30° rotation between them) varies considerably along various crystalline directions, reaching a maximum of a ∼0.66° rotation of the (0001) plane about the [01•1] axis. This is ∼3% smaller than the misorientation measured in the non-ELOG reference, which reached a maximum of 0.68°. This misorientation varies measurably as the stripe or window dimensions are changed. The quality of the ELOG epilayers is improved when compared to the non- ELOG samples, though some local deviations from lattice coherence were observed. Long range and large-scale (order of 100 μm long) strain structures were observed in all multi quantum well epilayers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 572: Symposium Y – Wide-Bandgap Semiconductors for High-Power, High Frequency… , 1999 , 327
Copyright
Copyright © Materials Research Society 1999

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References

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