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Synchrotron X-Ray Topography as a Non-Destructive Monitor of Damage Accompanying IC Processing
Published online by Cambridge University Press: 28 February 2011
Abstract
Synchrotron white beam x-ray topography in transmission geometry has been used to monitor the damage accompanying a Rapid Thermal Processing (RTP) treatment of Si wafers. The behavior of low and high carbon-content Si is contrasted and discussed. The applicability of this technique to this kind of study is demonstrated, with particular emphasis being laid on its non-destructive nature. The general usefulness of the technique as a monitor for damage accompanying IC processing is discussed.
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- Copyright © Materials Research Society 1991