Hostname: page-component-78c5997874-8bhkd Total loading time: 0 Render date: 2024-11-20T00:24:37.080Z Has data issue: false hasContentIssue false
  • English
  • Français

Synchrotron white beam x-ray topography (SWBXT) and high resolution triple axis diffraction studies on AlN layers grown on 4H- and 6H-SiC seeds

Published online by Cambridge University Press:  01 February 2011

Balaji Raghothamachar ,
Michael Dudley ,
Rafael Dalmau ,
Raoul Schlesser  and
Zlatko Sitar
Balaji Raghothamachar
Affiliation:
Department of Materials Science & Engineering, SUNY at Stony Brook, Stony Brook, NY 11794–2275, U.S.A.
Michael Dudley
Affiliation:
Department of Materials Science & Engineering, North Carolina State University, Raleigh, NC 27695–3419, U.S.A.
Rafael Dalmau
Affiliation:
Department of Materials Science & Engineering, North Carolina State University, Raleigh, NC 27695–3419, U.S.A.
Raoul Schlesser
Affiliation:
Department of Materials Science & Engineering, North Carolina State University, Raleigh, NC 27695–3419, U.S.A.
Zlatko Sitar
Affiliation:
Department of Materials Science & Engineering, North Carolina State University, Raleigh, NC 27695–3419, U.S.A.
Get access

Abstract

For nitride based devices such as LEDs, high power FETs and laser diodes, single crystal substrates of AlN are highly desirable. While the sublimation technique is suitable for growing bulk AlN crystals, appropriate seeds are also necessary for growing large diameter oriented boules. 4H- and 6H-SiC substrates which are readily available commercially can potentially be implemented as seeds for bulk AlN growth. However, issues regarding SiC decomposition at high temperatures, thermal expansion mismatch, single crystal growth, etc. need to be addressed. Towards this end, a series of growth experiments have been carried out in a resistively heated reactor using on and off-axis 4H- and 6H-SiC substrates as seeds for AlN growth from the vapor phase. Several hundred microns thick AlN layers have been grown under different growth conditions. Synchrotron white beam x-ray topography (SWBXT) has been used to map the defect distribution in the grown layers and high resolution triple axis x-ray diffraction (HRTXD) experiments were carried out to record reciprocal space maps from which tilt, mismatch and strain data can be obtained. These results are analyzed with respect to the growth conditions in order to gain a better understanding of this growth process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 831: Symposium E – GaN, AlN, InN, and Their Alloys , 2004 , E8.24
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Van Vecten, J. A., Phys. Rev. B, 7 (1973) 1479.Google Scholar
[2] Grzegory, I., Jun, J., Boćkowski, M., Krukowski, St., Wróblewski, M., Lucznik, B., Porowski, S.. J. Phys. Chem. Solids, 56 (1995) 639.Google Scholar
[3] Bockowski, M., Wroblewski, M., Lucznik, B., Grzegory, I., Materials Science in Semiconductor Processing, 4 (2001) 543.Google Scholar
[4] Dwiliski, R., Doradziski, R., Garczyski, J., Sierzputowski, L., Palczewska, M., Wysmolek, Andrzej, Kamiska, M.. MRS Internet J. Nitride Semicond. Res. 3, 25 (1998) 1.Google Scholar
[5] Slack, G.A., McNelly, T.F., J. Crystal Growth, 34 (1976) 263.Google Scholar
[6] Raghothamachar, B., Vetter, W. M., Dudley, M., Dalmau, R., Schlesser, R., Sitar, Z., Michaels, E., Kolis, J. W., J. Crystal Growth, 246(3–4), (2002) 271.Google Scholar
[7] Rojo, J. C., Schowalter, L. J., Morgan, K., Florescu, D. I., Pollak, F. H., Raghothamachar, B., Dudley, M., Mater. Res. Soc. Symposium Proceedings, 680E, E.2.1.1 (2001).Google Scholar
[8] Liu, L., Zhuang, D., Liu, B., Shi, Y., Edgar, J. H., Rajasingham, S., Kuball, M., Phys. Stat. Sol. (a) 188 (2), 769–773 (2001).Google Scholar
[9] Edgar, J. H., Liu, L., Liu, B., Zhuang, D., Chaudhuri, J., Kuball, M., Rajasingham, S., J. Crystal Growth, 246, (2002), 187–193.Google Scholar
[10] Schlesser, R., Sitar, Z., J. Cryst. Growth, 234 (2002) 349.Google Scholar
[11] Schlesser, R., Dalmau, R. and Sitar, Z., J. Cryst. Growth 241, 416 (2002).Google Scholar
[12] Dudley, M., Encyclopedia of Advanced Materials, 4, Pergamon Press, New York, 1994, p. 2950.Google Scholar
[13] Dudley, M. and Huang, X.R., in Encyclopedia of Materials: Science and Technology, Elsevier Science, New York, (2001).Google Scholar
[14] Nagai, H., J. Appl. Phys. 45, 3789 (1974).Google Scholar