Hostname: page-component-586b7cd67f-dsjbd Total loading time: 0 Render date: 2024-11-25T17:46:26.793Z Has data issue: false hasContentIssue false
  • English
  • Français

Synchrotron Radiation X-ray Microdiffraction Study of Cu Interconnects

Published online by Cambridge University Press:  10 February 2011

X. Zhang ,
H. Solak ,
F. Cerrina ,
B. Lai ,
Z. Cai ,
P. Ilinski ,
D. Legnini  and
W. Rodrigues
X. Zhang
Affiliation:
Electrical and Computer Engineering Department and Center for Nanotechnology, University of Wisconsin-Madison, Madison, Wisconsin 53706
H. Solak
Affiliation:
Electrical and Computer Engineering Department and Center for Nanotechnology, University of Wisconsin-Madison, Madison, Wisconsin 53706
F. Cerrina
Affiliation:
Electrical and Computer Engineering Department and Center for Nanotechnology, University of Wisconsin-Madison, Madison, Wisconsin 53706
B. Lai
Affiliation:
Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439
Z. Cai
Affiliation:
Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439
P. Ilinski
Affiliation:
Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439
D. Legnini
Affiliation:
Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439
W. Rodrigues
Affiliation:
Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439
Get access

Abstract

We have used synchrotron radiation x-ray microdiffraction to study the microstructure and strain variation of copper interconnects. Different types of local microstructures have been found in different samples. Our data show that the Ti adhesion layer has a dramatic effect on Cu microstructure. On site electromigration test has been conducted and strain profile along the same interconnect line was measured before and after this electrical stressing. Cu fluorescence scan was used to find the mass variations along the line. Voids and hillocks can be clearly identified in this scan. x-ray micro-diffraction was used to measure the strain change around the interesting regions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 590: Symposium R – Applications of Synchrotron Radiation Techniques…V , 1999 , 259
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Curry, J., Fitzgibbon, G., Guan, Y., Muollo, R., Nelson, G., and Thomas, A., Proc. of the 20th Annl. Int. Reliability Symp., 6 (1984)Google Scholar
[2] Klema, J., Pyle, R. and Domangue, E., Proc. of the 20th Annl. Int. Reliability Symp., 1 (1984)Google Scholar
[3] Sorbello, R.S., Mater. Res. Soc. Symp. Proc. 225, 3 (1991)10.1557/PROC-225-3Google Scholar
[4] Blech, I.A., J. Appl. Phys. 47, 1203 (1976)10.1063/1.322842Google Scholar
[5] Hu, C.K., Harper, J.M.E., Int. Symp. on VLSI Tech. and Appl., 1997, 18–22 Google Scholar
[6] Gupta, D., Materials Chemistry and Physics 41 (1995) 199–205 10.1016/0254-0584(95)01514-0Google Scholar
[7] Korhonen, M.A., Borgesen, P., Tu, K.N., and Li, C., J. Appl. Phys. 73, 3790(1993)10.1063/1.354073Google Scholar
[8] Bauer, C.L. and Mullins, W.W., Appl. Phys. Lett. 61, 2987(1992)10.1063/1.108011Google Scholar
[9] Park, Y.J. and Thompson, C.V., J. Appl. Phys. 82, 4277(1997)10.1063/1.366234Google Scholar
[10] Besser, P.R. and Bravman, J.C., AIP Conference Proceedings 305, 46(1993).10.1063/1.45700Google Scholar
[11] Wang, P.C., Cargill, G.S., Noyan, I.C., Liniger, E.G., Hu, C.-K. and Lee, K.Y., Materials Reliability in Microelectronics, Mater. Res. Soc. Proc. 427, 35 (1996).10.1557/PROC-427-35Google Scholar
[12] Lai, B. et al. , Appl. Phys. Lett. 61, 1877(1992)10.1063/1.108400Google Scholar
[13] Solak, H. H., Vladimirsky, Y., Cerrina, F., Lai, B., Yun, W., Cai, Z., Ilinski, P., Legnini, D., Rodrigues, W., J. Appl. Phys., 86(2), 884(1999)10.1063/1.370819Google Scholar
[14] Liotard, J.L., Gupta, D., Psaras, P.A., Ho, P.S., J. Appl. Phys., 57(6), 1895(1985)10.1063/1.334422Google Scholar
[15] Wang, P.-C., Cargill, G.S., Noyan, I.C., and Hu, C.-K., Appl. Phys. Lett. 72, 1296(1998)10.1063/1.120604Google Scholar