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Switchable Microcrystallization Near Threshold in Laser Annealing of GeSe2 Glass and Evaporated Films

Published online by Cambridge University Press:  15 February 2011

J. C. Phillips
J. C. Phillips*
Affiliation:
Bell Laboratories, Murray Hill, New Jersey, 7974, USA
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Abstract

Just below threshold for irreversible macrocrystallization there may exist a narrow energy (or power) density region where microcrystallites are formed. In the case of Si and GaAs this region lies just above the threshold for melting and the microcrystallites are formed irreversibly. In the case of GeSe2 when Urbach tail laser energy is used just below the macrocrystallization threshold the photons selectively replace like-atom bonds with chemically ordered bonds, and microcrystallization can be thermally reversed in melt-quenched glass at temperatures as low as Tg/2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 103
Copyright
Copyright © Materials Research Society 1982

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References

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