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Surfactant-Mediated Growth of Aigaas by Molecular Beam Epitaxy

Published online by Cambridge University Press:  15 February 2011

Ron Kaspi ,
Keith R. Evans ,
Don C. Reynolds ,
Jeff Brown  and
Marek Skowronski
Ron Kaspi
Affiliation:
Wright State University, University Research Center, Dayton, OH 45435
Keith R. Evans
Affiliation:
Wright Laboratory, Solid State Electronics Directorate (WL/ELDM), Wright-Patterson AFB, OH 45433-7323
Don C. Reynolds
Affiliation:
Wright State University, University Research Center, Dayton, OH 45435
Jeff Brown
Affiliation:
Wright Laboratory, Solid State Electronics Directorate (WL/ELDM), Wright-Patterson AFB, OH 45433-7323
Marek Skowronski
Affiliation:
Carnegie Mellon University, Department of Materials Science and Engineering, Pittsburgh, PA 15213
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Abstract

Antimony was used as a surfactant during solid-source molecular beam epitaxy of AIGaAs layers. A steady-state surface-segregated population of Sb was maintained at the AIGaAs growth surface by providing a continuous Sb2 flux to compensate for loss due to thermal desorption. Above ∼ 650 °C, the incorporation rate of Sb was negligible, thereby allowing the deposition of AlGaAs layers despite the presence of Sb at the surface. A significant improvement in the optical quality of Al0.24Ga0 76As layers was observed by photoluminescence. In addition, extended reflection high energy electron diffraction oscillations and a reduction in Al0.24Ga0.76As surface roughness was observed when Sb was employed as a surfactant.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 379: Symposium C – Strained Layer Epitaxy–Materials, Processing, and Devise Applications , 1995 , 79
Copyright
Copyright © Materials Research Society 1995

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References

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