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Surface-Related Photoluminescence Effects in GaN

Published online by Cambridge University Press:  11 February 2011

M. A. Reshchikov ,
M. Zafar Iqbal ,
D. Huang ,
L. He  and
H. Morkoç
M. A. Reshchikov
Affiliation:
Virginia Commonwealth University, Richmond, VA 23284, U.S.A.
M. Zafar Iqbal
Affiliation:
On leave in VCU from the Quaid-i-Azam University, Islamabad, Pakistan
D. Huang
Affiliation:
Virginia Commonwealth University, Richmond, VA 23284, U.S.A.
L. He
Affiliation:
Virginia Commonwealth University, Richmond, VA 23284, U.S.A.
H. Morkoç
Affiliation:
Virginia Commonwealth University, Richmond, VA 23284, U.S.A.
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Abstract

Photoluminescence (PL) from GaN epilayers is found to be sensitive to the ambient atmosphere and length of UV exposure. We studied the effect of UV illumination in different ambients including air, oxygen, nitrogen and hydrogen gases on room-temperature PL of GaN grown on sapphire by molecular beam epitaxy. In some samples the PL intensity increased markedly in vacuum as compared to excitation in air, whereas in others it decreased appreciably. While air and oxygen showed strong reversible variation of the PL intensity as compared to vacuum, nitrogen and hydrogen atmospheres led to a very small change. In some samples we observed a shift of the yellow luminescence band with change of ambient, in others no shift was detected. PL intensity also changed during UV irradiation when the sample was in air ambient. Possible reasons for our observations are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L11.2
Copyright
Copyright © Materials Research Society 2003

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References

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