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Surface Treatment with UV-Excited Radicals for Highly-Reliable Gate Dielectrics

Published online by Cambridge University Press:  10 February 2011

Takashi Ito ,
Rinji Sugino ,
Toshiro Nakanishi ,
Satoshi Ohkubo ,
Yasuyuki Tamura  and
Kanetake Takasaki
Takashi Ito
Affiliation:
Electron Devices and Materials Laboratories, Fujitsu Laboratories Ltd. 10–1 Mori nosato-Wakayama, Atsugi, Japan 243–01
Rinji Sugino
Affiliation:
Electron Devices and Materials Laboratories, Fujitsu Laboratories Ltd. 10–1 Mori nosato-Wakayama, Atsugi, Japan 243–01
Toshiro Nakanishi
Affiliation:
Electron Devices and Materials Laboratories, Fujitsu Laboratories Ltd. 10–1 Mori nosato-Wakayama, Atsugi, Japan 243–01
Satoshi Ohkubo
Affiliation:
Electron Devices and Materials Laboratories, Fujitsu Laboratories Ltd. 10–1 Mori nosato-Wakayama, Atsugi, Japan 243–01
Yasuyuki Tamura
Affiliation:
Electron Devices and Materials Laboratories, Fujitsu Laboratories Ltd. 10–1 Mori nosato-Wakayama, Atsugi, Japan 243–01
Kanetake Takasaki
Affiliation:
Electron Devices and Materials Laboratories, Fujitsu Laboratories Ltd. 10–1 Mori nosato-Wakayama, Atsugi, Japan 243–01
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Abstract

The UV-excited chlorine radical treatment effectively removed trace metal contaminants from Si ans SiO2 surfaces. We have found that this is predomonantly attributed to reactions between metal and chlorine, and metal oxides and silicon chloride, respectively. The former process was subjected to identify a breakdown spot on a thin gate dielectric film. After dielectric breakdown, a silicon crystallized filament as small as a few nanometers in diameter was formed and was selectively etched with chlorine radicals revealing a successively-etched region of the Si substrate. Nonuniformi t i es of native oxides on silicon were also detected using the same method. Gettering and etching with a poly Si layer showed a possibility to make a gate dielectric film damage free and contamination free. Densi fication of native oxides formed after conventional wet cleaning of silicon was made with UV-excited oxygen radicals. Electrical characteristics of gate dielectrics treated with UV-excited chlorine and oxygen radicals showed high reliability.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 473: Symposium J – Materials Reliability in Microelectronics VII , 1997 , 131
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

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