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Surface smoothing of glass substrate by irradiation of ionic liquid ion beams

Published online by Cambridge University Press:  20 June 2013

Mitsuaki Takeuchi
Affiliation:
Photonics and Electronics Science and Engineering Center, Kyoto University, Kyotodaigaku-Katsura, Nishikyo-ku, Kyoto 615-8510, Japan
Takuya Hamaguchi
Affiliation:
Photonics and Electronics Science and Engineering Center, Kyoto University, Kyotodaigaku-Katsura, Nishikyo-ku, Kyoto 615-8510, Japan
Hiromichi Ryuto
Affiliation:
Photonics and Electronics Science and Engineering Center, Kyoto University, Kyotodaigaku-Katsura, Nishikyo-ku, Kyoto 615-8510, Japan
Gikan H Takaoka
Affiliation:
Photonics and Electronics Science and Engineering Center, Kyoto University, Kyotodaigaku-Katsura, Nishikyo-ku, Kyoto 615-8510, Japan
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Abstract

Surface smoothing of a barium borosilicate glass substrate by irradiation of ionic liquid ion beams were investigated. 1-ethyl-3-methylimidaolium tetrafluoroborate (EMIM-BF4) and 1-butyl-3-methylimidazolium hexafluorophosphate (BMIM-PF6) were used for the source liquid. Surface roughness represented as the arithmetic mean value decreased from 0.17 nm to 0.13 nm by the BMIM-PF6 negative ion beam. Secondary electron microscope (SEM) observation for the glass surface irradiated with the BMIM-PF6 negative ion beam showed a clear image without an electrical charge-up, though the EMIM-BF4 negative ion beam irradiated glass yielded a charged up image. X-ray photoelectron spectroscopy (XPS) analysis implied that the surface layer including cation-anion pair of BMIM-PF6 was deposited by the BMIM-PF6 negative ion beam irradiation, while an insulated surface with barium fluoride was formed by the EMIM-BF4 negative ion beam irradiation.

Type
Articles
Copyright
Copyright © Materials Research Society 2013 

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References

REFERENCES

Guilet, S., Perez-Martinez, C., Jegou, P., Lozano, P., Gierak, J., Microelectronic Engineering 88 (2011) 1968.CrossRefGoogle Scholar
Romero-Sanz, I., De Carcer, I.A., De La Mora, J.F., Journal of Propulsion and Power 21 (2005) 239.CrossRefGoogle Scholar
Fujiwara, Y., Saito, N., Nonaka, H., Ichimura, S., J. Appl. Phys. 111 (2012) 064901.CrossRefGoogle Scholar
Takeuchi, M., Hamaguchi, T., Ryuto, H., Takaoka, G.H., Nuclear Inst. and Methods in Physics Research, B, in press .Google Scholar
Villar-Garcia, I.J., Smith, E.F., Taylor, A.W., Qiu, F., Lovelock, K.R.J., Jones, R.G., Licence, P., Phys. Chem. Chem. Phys. 13 (2011) 2797.CrossRefGoogle Scholar
Foelske-Schmitz, A., Weingarth, D., Koetz, R., Electrochimica Acta 56(n.d.) 10321.CrossRefGoogle Scholar
Kawamoto, Y., Ogura, K., Shojiya, M., Takahashi, M., Kadono, K., Journal of Fluorine Chemistry 96 (1999) 135.CrossRefGoogle Scholar