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Surface Roughness Theory and Low-Temperature Epitaxy

Published online by Cambridge University Press:  21 February 2011

Srinivasan Krishnamurthy ,
M.A. Berding ,
A. Sher  and
A.-B. Chen
Srinivasan Krishnamurthy
Affiliation:
SRI International, Menlo Park, CA 94025
M.A. Berding
Affiliation:
SRI International, Menlo Park, CA 94025
A. Sher
Affiliation:
SRI International, Menlo Park, CA 94025
A.-B. Chen
Affiliation:
Department of Physics, Auburn University, Auburn, AL 36839
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Abstract

A single-and multilayer growth model is presented. Surface order-disorder transitions are studied with the entropy calculated in the Bragg-William approximation and in the quasi-chemical approximation. A plausible explanation for high-quality growth obtained with energy-assistance is given. The model has been extended to study low-temperature epitaxial growth of HgTe and CdTe on different surfaces. The relevant surface energies are evaluated in a Green's function approach.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 161: Symposium E – Properties of II-VI Semiconductors: Bulk Crystals, Epitaxial Films, Quantum Well Structures, and Dilute Magnetic Systems , 1989 , 291
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1. Jackson, K.A., Uhlmann, D.R., and Hunt, J. D., J. Crys. Growth, 1, 1 (1967).Google Scholar
2. Krishnamurthy, S., Berding, M.A., Sher, A., and Chen, A.-B., J. Crys. Growth (submitted).Google Scholar
3. Harper, R.L., Han, J.W., Hwang, S., Lansari, Y., Giles, N.C., Cook, J.W., and Schetzina, J.F., J. Vac. Sci. Tech., B7, 244 (1988).Google Scholar
4. Green, J., CRC Critical Reviews and Solidstate and Materials Sciences, 11, 47 (1984).Google Scholar
5. Krishnamurthy, S., Berding, M.A., Sher, A., and Chen, A.-B., J. Appl. Phys. (to be submitted).Google Scholar
6. We define Hg-stabilized growth to be the case where the relative Te and Hg fluxes are such that any exposed surface atoms are Hg; in Te-stabilized growth, the converse is true.Google Scholar