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Surface Roughness in Kinetic Growth with Diffusion

Published online by Cambridge University Press:  25 February 2011

Hong Yan
Hong Yan*
Affiliation:
Dept. of Materials Science & Engineering, University of Washington, Seattle, WA 98195
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Abstract

The evolution of surface roughness in kinetic growth with diffusion is studied by computer simulation of ballistic deposition with an activated hopping algorithm, in which the deposited particles diffuse on the surface via random walks. The results demonstrate that the KPZ-type scaling dictates the asympototic statistical properties of surface roughness at elevated temperatures, which are consistent with earlier studies. As surface diffusion is crucially dependent on substrate temperature and deposition rate, we show that they play essential roles in determining the morphology of the film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 280: Symposium B – Evolution of Surface and Thin Film Microstructure , 1992 , 289
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

Villain, J., J. Physique I, 1, 19 (1991).Google Scholar
[2] Wolf, D.E. and Villain, J., Europhysics Lett., 13, 389 (1990).CrossRefGoogle Scholar
[3] Das Sarma, S and Tamborenea, P., Phys. Rev. Lett., 66, 325 (1991).Google Scholar
[4] Lai, Z.W. and Das Sarma, S., Phys. Rev. Lett., 66, 2348 (1991).CrossRefGoogle Scholar
[5] Yan, H., Phys. Rev. Lett., 68, 3048 (1992).Google Scholar
[6] Kessler, D.A., Levine, H., and Sander, L.M., Phys. Rev. Lett., 69, 100 (1992).Google Scholar
[7] Kang, H.C. and Evans, J.W., Surf. Sci., 269/270, 784 (1992).Google Scholar
[8] Gó-mez-Rodrfguez, J.M. et al., J. Vac. Sci. Technol. B, 9, 495 (1991);CrossRefGoogle Scholar
Chevrier, J. et al., Europhysics Lett., 16, 737 (1991).Google Scholar
[9] Kardar, M., Parisi, G. and Zhang, Y.-C., Phys. Rev. Lett., 56, 889 (1986)Google Scholar
[10] Leamy, H.J., Gilmer, G.H., and Dirks, A.G., in Current Topics in Materials Science, Vol. 6, edited by Kalids, E. (North-Holland, Amsterdan, 1980), p. 309.Google Scholar
[11] Weeks, J.D., in Ordering in Strongly Fluctuating Condensed Matter Systems, edited by Riste, T. (Plenum, New York, 1980), p. 293.Google Scholar
[12] Madhukar, A. and Ghaisas, S.V., CRC Crit. Rev. Solid State Mater. Sci., 14. 1 (1988), and references therein.Google Scholar
[13] Marmorkos, I.K. and Das Sarma, S., Surf. Sci. Lett, 237, L411 (1990).CrossRefGoogle Scholar
[14] Kessler, D.A. and Orr, B.G., preprint.Google Scholar
[15] Meakin, P., Ramanlal, P., Sander, L.M. and Ball, R.C., Phys. Rev. A, 34, 5091 (1986).Google Scholar
[16] Eaglesham, D.J., Gossmann, H.-J. and Cerullo, M., Phys. Rev. Lett., 65, 1227 (1990).Google Scholar