Hostname: page-component-586b7cd67f-t7fkt Total loading time: 0 Render date: 2024-11-25T17:30:23.725Z Has data issue: false hasContentIssue false

Surface Roughening and Composition Modulation of ZnSe-related II-VI epitaxial films

Published online by Cambridge University Press:  03 September 2012

Shigetaka Tomiya
Affiliation:
Sony Corporation Research Center, 174, Fujitsuka Hodogaya, Yokohama, 240 Japan
Hironori Tsukamoto
Affiliation:
Sony Corporation Research Center, 174, Fujitsuka Hodogaya, Yokohama, 240 Japan
Satoshi Itoh
Affiliation:
Sony Corporation Research Center, 174, Fujitsuka Hodogaya, Yokohama, 240 Japan
Kazushi Nakano
Affiliation:
Sony Corporation Research Center, 174, Fujitsuka Hodogaya, Yokohama, 240 Japan
Etsuo Morita
Affiliation:
Sony Corporation Research Center, 174, Fujitsuka Hodogaya, Yokohama, 240 Japan
Akira Ishibashi
Affiliation:
Sony Corporation Research Center, 174, Fujitsuka Hodogaya, Yokohama, 240 Japan
Get access

Abstract

We have investigated ZnSSe and ZnMgSSe epitaxial layers lattice-matched to GaAs (001) substrates grown by molecular beam epitaxy using atomic force microscopy and transmission electron microscopy. Under II-rich conditions with c(2x2) surface reconstruction, surface morphology exhibited corrugation aligned in the [1ī0] direction and composition modulation was observed in the same [1ī0] direction. Under VI-rich condition with (2x1) surface reconstruction, the surface morphology becomes rounded grain-like and composition modulation was not observed. The formation of composition modulation is associated with the surface corrugated structures.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Nakayama, N., Okuyama, H., Kato, E., Itoh, S., Ozawa, M., Ohata, T., Nakano, K., Ikeda, M., Ishibashi, A. and Mori, Y., Electron Lett. 30, 568 (1994).Google Scholar
2 Hua, G. C. , Otsuka, N., Grillo, D.C., Han, J., He, L., and Gunshor, R.L., J. Crystal Growth 138, 367 (1994).Google Scholar
3 Kuo, L. H., Salamanca-Riba, L., Wu, B. J., DePuydt, J. M., Haugen, G.M., CHeng, H., Guha, S., and Hasse, M.A., Appl. Phys. Lett. 65, 1230 (1994).Google Scholar
4 Okuyama, H., Kawasumi, T., Ishibashi, A. and Ikeda, M. (to be published)Google Scholar
5 Tomiya, S. Minatoya, R., Tsukamoto, H., Itoh, S., Nakano, K., Morita, E., Ishibashi, A., ICPS proceedings 1079, 3 (1996); (submitted to J. Appl. Phys.)Google Scholar
6 Guo, H., J. Mech. Phys. Solids 39, 443 (1991).Google Scholar
7 Srolovitz, D. J., Actametall. 37, 621 (1989).Google Scholar
8 Okuyama, H., Nakano, K., Miyajima, T., and Akimoto, K., Jpn. J. Appl. Phys., 30, L1620 (1991).Google Scholar