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Surface Reactions of Metal Catalysts for Carbon Nanotubes on an Oxide Thin Layer/Si Substrates Studied by in-situ Micro X-ray Adsorption Spectroscopy using SPELEEM

Published online by Cambridge University Press:  26 February 2011

Fumihiko Maeda ,
Hiroki Hibino ,
Satoru Suzuki ,
FangZhun Guo  and
Yoshio Watanabe
Fumihiko Maeda
Affiliation:
[email protected], Nippon Telegraph and Telephone Corporation, NTT Basic Research Laboratories, 3-1 Morinosato-Wakamiya, Atsugi-shi, Kanagawa, 225-0015, Japan, +81-46-240-3423, +81-46-240-4711
Hiroki Hibino
Affiliation:
[email protected], NTT Corporation, NTT Basic Research Laboratories, 3-1 Morinosato-Wakamiya, Atsugi-shi, Kanagawa, 243-0198, Japan
Satoru Suzuki
Affiliation:
[email protected], NTT Corporation, NTT Basic Research Laboratories, 3-1 Morinosato-Wakamiya, Atsugi-shi, Kanagawa, 243-0198, Japan
FangZhun Guo
Affiliation:
[email protected], The Japan Synchrotron Radiation Research Institute, 1-1-1 Kouto, Mikazuki-cho, Sayo-gun, Hyogo, 679-5198, Japan
Yoshio Watanabe
Affiliation:
[email protected], The Japan Synchrotron Radiation Research Institute, 1-1-1 Kouto, Mikazuki-cho, Sayo-gun, Hyogo, 679-5198, Japan
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Abstract

To clarify the reaction process of Co and Fe with a oxide layer on Si substrates, the annealing processes were analyzed using spectroscopic photoemission and low-energy electron microscopy for a special surface where oxide areas and clean substrate areas (voids) coexist closely in a micrometer-order view. From analyses of XAS spectra and edge jump ratios obtained from the photoemission electron microscopy image, we clarified that Co atoms in the void area remain because of the formation of silicides, but that those on the oxide layer disappear because metallic Co atoms easily diffuse. In contrast, in the case of Fe, we found the formation of various silicides and their gradual diffusion into Si substrate even in the form of silicides.

Keywords

photoemissionnanostructuresurface reaction
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 967: Symposium U – Advances in In Situ Characterization of Film Growth and Interface Processes , 2006 , 0967-U05-03
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

1. Maeda, F., Laffosse, E., Watanabe, Y., Suzuki, S., Homma, Y., Suzuki, M., Kitada, T., Ogiwara, T., Tanaka, A., Kimura, M.,Mihai, V.A., Yoshikawa, H., and Fukushima, S., Physica E 24, 19 (2004).Google Scholar
2. Maeda, F., Hibino, H., Suzuki, S., Kobayashi, Y., Watanabe, Y., and Guo, F.-Z., e-Journal of Surface Science and Nanotechnology 4, 155 (2006).Google Scholar
3. Tromp, R., Rubloff, G. W., Balk, P., and LeGoues, F. K., Phys. Rev. Lett. 55, 2332 (1985).Google Scholar
4. Liehr, M., Lewis, J. E., and Rubloff, G. W., J. Vac. Sci. Technol. A 5, 1559 (1987).Google Scholar
5. Sirotti, F., Santis, M. De, and Rossi, G., Phys. Rev. B 48, 8299 (1993).Google Scholar
6. Eisebitt, S., Rubensson, J.-E., Nicodemus, M., BöSke, T., Blügel, S., Eberhardt, W., Radermacher, K., Mantl, S., and Bihlmayer, G., Phys. Rev. B 50, 18330 (1994).Google Scholar
7. Tung, R. T., Appl. Phys. Lett. 68, 3461 (1996).Google Scholar
8. Lee, M. Y. and Bennett, P. A., Phys. Rev. Lett. 75, 4460 (1995).Google Scholar