Crossref Citations
This article has been cited by the following publications. This list is generated based on data provided by
Crossref.
Collins, R. W.
and
Cavese, J. M.
1987.
I
n s
i
t
u ellipsometry comparison of the nucleation and growth of sputtered and glow-discharge a-Si:H.
Journal of Applied Physics,
Vol. 62,
Issue. 10,
p.
4146.
Collins, R. W.
and
Cavese, J. M.
1987.
Effect of deposition conditions on the nucleation and growth of glow-discharge a-Si:H.
Journal of Applied Physics,
Vol. 61,
Issue. 5,
p.
1869.
Street, R.
Kakalios, J.
Tsai, C.
and
Hayes, T.
1987.
Thermal-equilibrium processes in amorphous silicon.
Physical Review B,
Vol. 35,
Issue. 3,
p.
1316.
Akihisa Matsuda
Katsuhiko Nomoto
Yoshiaki Takeuchi
Atsushi Suzuki
Akimasa Yuuki
and
Perrin, Jérôme
1990.
Temperature dependence of the sticking and loss probabilities of silyl radicals on hydrogenated amorphous silicon.
Surface Science,
Vol. 227,
Issue. 1-2,
p.
50.
Kakalios, James
1991.
Hydrogen in Semiconductors.
Vol. 34,
Issue. ,
p.
381.
Collins, R. W.
An, Ilsinan
Li, Y. M.
and
Wroński, C. R.
1991.
Surface Microstructural Evolution of Ultrathin films by Real time Spectroscopic Elupsometry.
MRS Proceedings,
Vol. 237,
Issue. ,
An, ILSIN
Li, Y.M.
Wronski, C.R.
and
Collins, R. W.
1993.
Sub-Surface Equilibration of Hydrogen with the a-Si:H Network Under Film Growth Conditions.
MRS Proceedings,
Vol. 297,
Issue. ,
Lu, Yiwei
An, Ilsin
Gunes, M.
Wakagi, M.
Wronski, C. R.
and
Collins, R. W.
1993.
Nucleation and growth of hydrogenated amorphous silicon-carbon alloys: Effect of hydrogen dilution in plasma-enhanced chemical vapor deposition.
Applied Physics Letters,
Vol. 63,
Issue. 16,
p.
2228.
COLLINS, ROBERT W.
AN, ILSIN
NGUYEN, HIEN V.
LI, YOUMING
and
LU, YIWEI
1994.
Optical Characterization of Real Surfaces and Films.
Vol. 19,
Issue. ,
p.
49.
Karstens, H.
and
Hess, P.
1995.
Deposition of Amorphous Hydrogenated Silicon Films by VUV Laser CVD: Influence of Substrate Temperature.
MRS Proceedings,
Vol. 377,
Issue. ,
Bruno, Giovanni
Capezzuto, Pio
and
Cicala, Grazia
1995.
Plasma Deposition of Amorphous Silicon-Based Materials.
p.
1.
Guha, S.
Xu, X.
Yang, J.
and
Banerjee, A.
1995.
Microwave Glow-Discharge Deposition of Amorphous Silicon Based Alloys at High Deposition Rates for Solar Cell Application.
MRS Proceedings,
Vol. 377,
Issue. ,
Katiyar, M.
Yang, Y. H.
and
Abelson, J. R.
1995.
Hydrogen-surface reactions during the growth of hydrogenated amorphous silicon by reactive magnetron sputtering: A real time kinetic study by in situ infrared absorption.
Journal of Applied Physics,
Vol. 77,
Issue. 12,
p.
6247.
Maruyama, E.
Hishikawa, Y.
Tanaka, M.
Kiyama, S.
and
Tsuda, S.
1996.
Improvement in a-Si:H Properties by Inert Gas Plasma Treatment.
MRS Proceedings,
Vol. 420,
Issue. ,
Severens, R. J.
Sanden, M. C. M. Van De
Verhoeven, H. J. M.
Bastiaanssen, J.
and
Schram, D. C.
1996.
On the Effect of Substrate Temperature on a-Si:H Deposition Using an Expanding Thermal Plasma.
MRS Proceedings,
Vol. 420,
Issue. ,
van de Sanden, M.C.M
Severens, R.J
Bastiaanssen, J
and
Schram, D.C
1997.
High-quality a–Si:H grown at high rate using an expanding thermal plasma.
Surface and Coatings Technology,
Vol. 97,
Issue. 1-3,
p.
719.
Perrin, Jérôme
Shiratani, Masaharu
Kae-Nune, Patrick
Videlot, Hervé
Jolly, Jacques
and
Guillon, Jean
1998.
Surface reaction probabilities and kinetics of H, SiH3, Si2H5, CH3, and C2H5 during deposition of a-Si:H and a-C:H from H2, SiH4, and CH4 discharges.
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films,
Vol. 16,
Issue. 1,
p.
278.
Kessels, W.M.M
Severens, R.J
van de Sanden, M.C.M
and
Schram, D.C
1998.
Temperature and growth-rate effects on the hydrogen incorporation in a-Si:H.
Journal of Non-Crystalline Solids,
Vol. 227-230,
Issue. ,
p.
133.
Korevaar, B.A
Adriaenssens, G.J
Smets, A.H.M
Kessels, W.M.M
Song, H.-Z
van de Sanden, M.C.M
and
Schram, D.C
2000.
High hole drift mobility in a-Si:H deposited at high growth rates for solar cell application.
Journal of Non-Crystalline Solids,
Vol. 266-269,
Issue. ,
p.
380.
Schröder, B
and
Bauer, S
2000.
Some indications of different film forming radicals in a-Si:H deposition by the glow discharge and thermocatalytic CVD processes.
Journal of Non-Crystalline Solids,
Vol. 266-269,
Issue. ,
p.
115.