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Surface Potential Investigation on Nano Domain Formation in Lithium Tantalate Single Crystal

Published online by Cambridge University Press:  26 February 2011

Mirai Katoh  and
Yasuo Cho
Mirai Katoh
Affiliation:
[email protected], Research Institute of Electrcal Communication, Tohoku University, 2-1-1, Katahira, Aoba-ku, Sendai, N/A, N/A, Japan
Yasuo Cho
Affiliation:
[email protected], Research Institute of Electrical Communication, Tohoku University, Japan
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Abstract

The surface potential distribution following polarization reversal by scanning probe microscopy is examined in order to determine the mechanism of anti-parallel polarization reversal and ring-shaped domain formation in single-crystal lithium tantalate. Lithium vacancy lattice defects are identified as charge-trapping sites, with the resultant surface potential distribution governing the formation of ring-shaped nano-domains. The behavior of this charge injection is shown to be dependent on atmospheric humidity.

Keywords

ferroelectricitynanoscalescanning probe microscopy (SPM)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 902: Symposium T – Ferroelectric Thin Films XIII , 2005 , 0902-T10-50
Copyright
Copyright © Materials Research Society 2006

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References

1 Cho, Y., Integr. Ferroelectr. 50, 189 (2002)Google Scholar
2 Kalinin, S. V. and Bonnell, D. A., Phys. Rev. B 65, 125408 (2002)Google Scholar
3 Abplanalp, M., Fousek, J. and Günter, P., Phys. Rev. Lett. 86, 5799 (2001)Google Scholar
4 Morita, T. and Cho, Y., Appl. Phys. Lett. 84 (2), 257–259 (2004)Google Scholar
5 Katoh, M., Morita, T. and Cho, Y., Integr. Ferroelectr. 68, 207 (2004)Google Scholar
6 Kalinin, S. V., Gruverman, A., Rodriguez, B. J., Shin, J., Baddorf, A. P., Karapetian, E. and Kachanov, M., J. Appl. Phys. 97, 074305 (2005)Google Scholar
7 Nonnenmacher, M., O'Boyle, M. P. and Wickramasinghe, H. K., Appl. Phys. Lett. 58 (25), 2921–2923 (1991)Google Scholar
8 Weeks, B. L. and Vaughn, M. W., Langmuir 21, 8096 (2005)Google Scholar