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Surface Passivation of Single Crystalline Silicon by Thin Amorphous Silicon Layers
Published online by Cambridge University Press: 21 February 2011
Abstract
It is shown that the deposition of a-Si:H films on c-Si wafers yields a reasonably passivated surface of the wafer. The passivation of the c-Si surface is better, if the a-Si:H film has better optoelectronic properties. Cleaning of the wafer surface deposition is required as it is shown for HF cleaning.
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- Research Article
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- Copyright © Materials Research Society 1993
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