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Surface Oxidation of Si (111) By High Purity Ozone and Negative Ions Produced by Rydberg Electron Transfer
Published online by Cambridge University Press: 10 February 2011
Abstract
The sub‐initial oxidation of Si (111) surface by a high‐flux pure ozone was investigated using X‐ray photoelectron spectroscopy. In addition to the advantage of the pure ozone which can efficiently oxidize the Si surface at room temperature, the high‐flux ozone was found to further enhance the oxidation. The possibility of producing negative ions of oxidizing gases using Rydberg electron transfer was also investigated.
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- Copyright © Materials Research Society 1997