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Surface Morphology of P-Doped LPCVD Silicon Films

Published online by Cambridge University Press:  15 February 2011

Rodica Plugaru ,
E. Vasile ,
P. Cosmin ,
Silvia Cosmin ,
C. Cobianu  and
D. Dascalu
Rodica Plugaru
Affiliation:
Institute of Microtechnology, P.O. Box 32-160, Bucharest, R-72225, Romania
E. Vasile
Affiliation:
METAV-SA, P.O.Box 18, Bucharest, R-71259, Romania
P. Cosmin
Affiliation:
Institute of Microtechnology, P.O. Box 32-160, Bucharest, R-72225, Romania
Silvia Cosmin
Affiliation:
Institute of Microtechnology, P.O. Box 32-160, Bucharest, R-72225, Romania
C. Cobianu
Affiliation:
Institute of Microtechnology, P.O. Box 32-160, Bucharest, R-72225, Romania
D. Dascalu
Affiliation:
Institute of Microtechnology, P.O. Box 32-160, Bucharest, R-72225, Romania
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Abstract

The formation of silicon hillocks at the surface of amorphous and polycrystalline LPCVD silicon films, as a function of phosphorus doping was investigated by SEM, TEM replica and X-ray diffraction techniques. The phosphorus doping was performed in the concentration range from 9 × 1019cm-3 tol.5 × 1020cm-3. It was observed that the hillocks size increases with the dopant concentration for the as-doped and for annealed films. The experimental data were analysed in a model involving diffusion of silicon during the doping and recrystallization processes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 403: Symposium I – Polycrystalline Thin Films: Structure, Texture, Properties and Applications II , 1995 , 339
Copyright
Copyright © Materials Research Society 1996

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