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Surface Morphology of LPE SiGe Layers Grown on (100) Si Substrates

Published online by Cambridge University Press:  10 February 2011

A. M. Sembian ,
I. Silier ,
K. Davies ,
A. Gutjahr ,
K. Lyutovich ,
M. Konuma  and
F. Banhart
A. M. Sembian
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D – 70569 Stuttgart, Germany, [email protected]
I. Silier
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D – 70569 Stuttgart, Germany, [email protected]
K. Davies
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D – 70569 Stuttgart, Germany, [email protected]
A. Gutjahr
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D – 70569 Stuttgart, Germany, [email protected]
K. Lyutovich
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D – 70569 Stuttgart, Germany, [email protected]
M. Konuma
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D – 70569 Stuttgart, Germany, [email protected]
F. Banhart
Affiliation:
Max-Planck-Institut für Metallforschung, Heisenbergstrasse 1, D – 70569 Stuttgart, Germany
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Abstract

We have investigated the surface morphology of thick SiGe layers grown on Si(100) substrates. SiGe layers containing different Ge concentrations (from 0 to 16 at.%) and having thickness of about 15μm are prepared by liquid phase epitaxy (LPE) method using various growth conditions. The wavelength of undulation of SiGe layers is found to be increasing when we adopt low cooling rates during LPE process. The roughness of the layer does not show any significant change with cooling rate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 485: Symposium G – Thin Film Structures for Photovoltaics , 1997 , 19
Copyright
Copyright © Materials Research Society 1998

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